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We study the energetics of island formation in Stranski-Krastanow growth within a parameter-free approach. It is shown that an optimum island size exists for a given coverage and island density if changes in the wetting layer morphology…

Materials Science · Physics 2009-10-31 L. G. Wang , P. Kratzer , M. Scheffler , N. Moll

The formation of coherently strained three-dimensional islands on top of the wetting layer in Stranski-Krastanov mode of growth is considered in a model in 1+1 dimensions accounting for the anharmonicity and non-convexity of the real…

Materials Science · Physics 2009-10-31 E. Korutcheva , A. -M. Turiel , I. Markov

Accounting for the anharmonicity of the real interatomic potentials in a model in 1+1 dimensions shows that coherent 3D islands can be formed on the wetting layer in a Stranski-Krastanov growth mode predominantly in compressed overlayers.…

Materials Science · Physics 2007-05-23 Ivan Markov , Jose Emilio Prieto

Stranski-Krastanov (SK) growth is reported experimentally as the growth mode that is responsible for the transition to three dimensional islands in heteroepitaxial growth. A kinetic Monte Carlo (KMC) model is proposed that can replicate…

Materials Science · Physics 2015-05-27 Arvind Baskaran , Peter Smereka

We investigate the formation and the coarsening dynamics of islands in a strained epitaxial semi-conductor film. These islands are commonly observed in thin films undergoing a morphological instability due to the presence of the elasto…

Materials Science · Physics 2016-11-02 Guido Schifani , Thomas Frisch , Mederic Argentina , Jean-Noël Aqua

The thermodynamics of the Stranski-Krastanov mode of epitaxial growth and the effect of the sign of the lattice misfit are discussed. The Stranski-Krastanov mode of growth represents a sequence of layer-by-layer or Frank-van der Merwe…

Materials Science · Physics 2017-11-10 J. E. Prieto , I. Markov

The formation of coherent three-dimensional islands in highly mismatched epitaxy is discussed in terms of the traditional concept of wetting. It is shown that the wetting layer and the 3D islands represent different phases which cannot be…

Materials Science · Physics 2009-11-07 J. E. Prieto , I. Markov

Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) using coherent x-rays opens new opportunities for in situ…

We study the equilibrium shape, shape transitions and optimal size of strained heteroepitaxial nanoislands with a two-dimensional atomistic model using simply adjustable interatomic pair potentials. We map out the global phase diagram as a…

Materials Science · Physics 2008-12-04 J. Jalkanen , O. Trushin , E. Granato , S. C. Ying , T. Ala-Nissila

We show that mean-field rate equations for submonolayer growth can successfully predict island size distributions in the pre-coalescence regime if the full dependence of capture numbers on both the island size and the coverage is taken into…

Statistical Mechanics · Physics 2015-05-19 Martin Körner , Mario Einax , Philipp Maass

The multi-scale interaction of self-consistently driven magnetic islands with electromagnetic turbulence is studied within the three dimensional, toroidal gyro-kinetic framework. It can be seen that, even in the presence of electromagnetic…

We investigate the kinetics of submonolayer epitaxial growth which is driven by a fixed flux of monomers onto a substrate. Adatoms diffuse on the surface, leading to irreversible aggregation of islands. We also account for the effective…

Statistical Mechanics · Physics 2009-10-31 P. L. Krapivsky , J. F. F. Mendes , S. Redner

Analytical approaches describing non-Fickian diffusion in complex systems are presented. The corresponding methods are applied to the study of statistical properties of pyramidal islands formation with interacting adsorbate at epitaxial…

Mesoscale and Nanoscale Physics · Physics 2014-10-16 D. O. Kharchenko , V. O. Kharchenko , S. V. Kokhan

We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that…

Materials Science · Physics 2017-01-17 C. Adelmann , B. Daudin , R. A. Oliver , G. A. D. Briggs , R. E. Rudd

We report simulations of submonolayer epitaxial growth using a continuum phase field model. The island density and the island size distribution both show scaling behavior. When the capillary length is small, the island size distribution is…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 Fan Ming , Andrew Zangwill

We study one-dimensional models of particle diffusion and attachment/detachment from islands where the detachment rates gamma(m) of particles at the cluster edges increase with cluster mass m. They are expected to mimic the effects of…

Statistical Mechanics · Physics 2009-11-13 R. B. Stinchcombe , F. D. A. Aarão Reis

The observed height distribution of clusters obtained in strained epitaxy has been often interpreted in terms of electronic effects. We show that some aspects can be explained classically by the interplay of strain and edge energies. We…

Materials Science · Physics 2015-06-25 J. E. Prieto , I. Markov

The purpose of this paper is to report some new experimental and theoretical results about the analysis of in-plane lattice spacing oscillations during two-dimensional (2D) homo and hetero epitaxial growth. The physical origin of these…

Materials Science · Physics 2015-05-13 P. Muller , P. turban , L. Lapena , S. Andrieu

The formation of dislocation-free three-dimensional islands during the heteroepitaxial growth of lattice-mismatched materials has been observed experimentally for several material systems. The equilibrium shape of the islands is governed by…

Materials Science · Physics 2008-02-03 E. Pehlke , N. Moll , M. Scheffler

We have studied the island size distribution and spatial correlation function of an island growth model under the effect of an elastic interaction of the form $1/r^{3}$. The mass distribution $P_n(t)$ that was obtained presents a pronounced…

Materials Science · Physics 2009-11-07 B. M. T. Goncalves , J. F. F. Mendes
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