Related papers: Hubbard Fermi surface in the doped paramagnetic in…
Using the strong coupling diagram technique, we investigate the extended Hubbard model on a two-dimensional square lattice. This approach allows for charge and spin fluctuations and a short-range antiferromagnetic order at nonzero…
A material which is an insulator entirely because of interaction effects is called a correlated insulator. Examples are trans-polyacetylene and the cuprate high temperature superconductors. Whereas doping of a band insulator results in a…
High magnetic fields have revealed a surprisingly small Fermi-surface in underdoped cuprates, possibly resulting from Fermi-surface reconstruction due to an order parameter that breaks translational symmetry of the crystal lattice. A…
In a recent publication [Chen et al., Phys. Rev. B 86, 165136 (2012)], we identified a line of Lifshitz transition points separating the Fermi liquid and pseudogap regions in the hole-doped two dimensional Hubbard model. Here we extend the…
We investigate the physics of frustrated 3-leg Hubbard ladders in the band limit, when hopping across the ladder's rungs (t$_{\perp}$) is of the same order as hopping along them (t) much greater than the onsite Coulomb repulsion (U). We…
We study the ground state of the doped Hubbard model on the honeycomb lattice in the small doping and strongly interacting region. The nature of the ground state by doping holes into the anti-ferromagnetic Mott insulating states on the…
We study novel electronic properties of the Hubbard model on a triangular lattice using the cellular dynamical mean-field theory. The interplay of strong geometric frustration and electron correlations causes a Mott transition at the…
We investigate anisotropic charge fluctuations in the two-dimensional Hubbard model at half filling. By the quantum Monte Carlo method, we calculate a momentum-resolved charge compressibility $\kappa (\bm{k}) = {d < n(\bm{k}) >}/{d \mu}$,…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…
The Hubbard model is a longstanding problem in the theory of strongly correlated electrons and a very active one in the experiments with ultracold fermionic atoms. Motivated by current and prospective quantum simulations, we apply a…
The underlying Fermi surface is a key concept for strongly-interacting electron models and has been introduced to generalize the usual notion of the Fermi surface to generic (superconducting or insulating) systems. By using improved…
Employing the four-band tight-binding model we study theoretically the doping dependence of the spin response in the normal state of novel Fe-based pnictide superconductors. We show that the commensurate spin density wave (SDW) transition…
Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard…
In the framework of the diagrammatic method with self-consistent field, the maximum on the temperature dependence of the susceptibility of a weakly doped narrow-band Hubbard magnet below the Curie temperature $T_{\rm C}$ is predicted. By…
We develop a systematic self-consistent perturbative expansion for the self energy of Hubbard-like models. The interaction lines in the Feynman diagrams are dynamically screened by the charge fluctuations in the system. Although the formal…
We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of…
We investigate the effect of hole doping on the strong-coupling Hubbard model at half-filling in spatial dimensions $D\ge 1$. We start with an antiferromagnetic mean-field description of the insulating state, and show that doping creates…
The Hall coefficient exhibits anomalous behavior in lightly doped Mott insulators. For strongly interacting electrons its computation has been challenged by analytical and numerical obstacles. We calculate the leading contributions in the…
We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site…
The Sn/Si(111)-({\sqrt}3{\times}{\sqrt}3)R30{\deg} surface, a 2D Mott insulator, has long been predicted and then found experimetally to metallize and even turn superconducting upon boron doping. In order to clarify the structural,…