Related papers: Metal-Insulator Transition in Randomly Interacting…
We study the nonequilibrium switching phenomenon associated with the metal-insulator transition under electric field E in correlated insulator by a gauge-covariant Keldysh formalism. Due to the feedback effect of the resistive current I,…
A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that…
We analyze behavior of correlated electrons described by Hubbard-like models at intermediate and strong coupling. We show that with increasing interaction a pole in a generic two-particle Green function is approached. The pole signals…
According to the scaling theory of localization, all quantum electronic states are localized in two-dimensional (2D) systems. One consequence of the theory is that there is no quantum percolation transition in 2D. However, in a real system…
Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which…
We have explored the critical metal-insulator phenomena for pyrochlore-type $R_2$Ir$_2$O$_7$, in which electron correlation strength and magnetic configuration are systematically controlled by varying the average rare-earth ionic radius…
We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while…
Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
We have investigated the interplay between the metal-insulator transition and ferromagnetism in $({\rm III}_{1-x},{\rm Mn}_x){\rm V}$ ferromagnetic semiconductors. Our study is based on a model in which $S=5/2$ Mn local moments are…
We study the influence of many-particle interaction in a system which, in the single particle case, exhibits a metal-insulator transition induced by a finite amount of onsite pontential fluctuations. Thereby, we consider the problem of…
In the present paper we propose a doubly orbitally degenerate narrow-band model with correlated hopping. The peculiarity of the model is taking into account the matrix element of electron-electron interaction which describes intersite…
We use Quantum Monte Carlo methods to determine $T=0$ Green functions, $G(\vec{r}, \omega)$, on lattices up to $16 \times 16$ for the 2D Hubbard model at $U/t =4$. For chemical potentials, $\mu$, within the Hubbard gap, $ |\mu | < \mu_c$,…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier…
We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…
A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It…
The emergence of glassy behavior of electrons is investigated for systems close to the disorder and/or interaction-driven metal-insulator transitions. Our results indicate that Anderson localization effects strongly stabilize such glassy…