Related papers: Phonon-assisted tunneling in asymmetric resonant t…
We present a self-consistent calculation, based on the global coherent tunnelling model, and show that structural asymmetry of double barrier resonant tunnelling structures significantly modifies the current-voltage characteristics compared…
Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet…
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…
Electronic transport in diatomic molecules (two-level systems) connected to metallic contacts is analyzed in the presence of competing electron-electron and electron-phonon interactions. We show that phonon emission and absorption processes…
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with…
Phonon-assisted tunneling in a double barrier resonant tunneling device can be seen as a resonance in the electron-phonon Fock space which is tuned by the applied voltage. We show that the geometrical parameters can induce a symmetry…
Nonlinear resonances in the classical phase space lead to a significant enhancement of tunneling. We demonstrate that the double resonance gives rise to a complicated tunneling peak structure. Such double resonances occur in Hamiltonian…
The expression for additional subgap current in the presence of electron-phonon interaction is derived. We show that the phonon assisted tunneling leads to appearance of peaks on current-voltage characteristics at the Josephson frequencies…
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE.…
We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved…
Within a phonon-assisted resonance level model we develop a self-consistent procedure for calculating electron transport currents in molecular junctions with intermediate to strong electron-phonon interaction. The scheme takes into account…
We theoretically analyze phonon-assisted tunneling transport in a quantum dot side connected to a Majorana bound state in a topological superconducting nanowire. We investigate the behavior of the current through the dot, for a range of…
The effect of an in-plane magnetic field on resonant tunneling in a symmetric GaAs/AlYGa1-YAs triple-barrier resonant tunneling TBRT structure is presented. The splitting of the resonant lines (and hence the coupling energy vs. magnetic…
We provide a detailed study of the interface Trap Assisted Tunneling (TAT) mechanism in tunnel field effect transistors to show how it contributes a major leakage current path before the Band To Band Tunneling (BTBT) is initiated. With a…
We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…
The effects caused by phonon-assisted tunnelling (PhAT) in a double quantum dot (QD) molecule immersed in a cavity were studied under the quantum Markovian master equation formalism in order to account for dissipation phenomena. We explain…
We report on electron transport through an artificial molecule formed by two tunnel coupled quantum dots, which are laterally confined in a two-dimensional electron system of an Al$_x$Ga$_{1-x}$As/GaAs heterostructure. Coherent molecular…
We study the effect of electron-phonon interaction on current and zero-frequency shot noise in resonant tunneling through a series triple-quantum-dot coupling to a local phonon mode by means of a nonperturbative mapping technique along with…
We develop a theory of electron tunneling accompanied by carrier-carrier scattering in graphene - insulator - graphene heterostructures. Due to the dynamic screening of Coulomb interaction, the scattering-aided tunneling is resonantly…
We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture…