Related papers: Asymmetric double barrier resonant tunneling struc…
Time evolution of tunneling in thermal medium is examined using the real-time semiclassical formalism previously developed. Effect of anharmonic terms in the potential well is shown to give a new mechanism of resonance enhanced tunneling.…
An explicit expression is obtained for the phase-time corresponding to tunneling of a (non-relativistic) particle through two rectangular barriers, both in the case of resonant and in the case of non-resonant tunneling. It is shown that the…
Effect of weak disorder on tunneling through a potential barrier is studied analytically. A diagrammatic approach based on the specific behavior of subbarrier wave functions is developed. The problem is shown to be equivalent to that of…
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5…
We show that an instability may be present in resonant tunneling through a quantum well in one, two and three dimensions, when the resonance lies near the emitter Fermi level. A simple semiclassical model which simulates the resonance and…
The modification of the electronic current resulting from Stark resonances has been studied for the semiconductor nanowire with the double-barrier structure. Based on the calculated current-voltage characteristics we have shown that the…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
We present an improved Wentzel-Kramers-Brillouin (WKB) calculation of tunnel splitting in one dimensional asymmetric double well potentials. We show that the tunnel splitting in general can have linear dependence on the bias energy, beside…
We demonstrate that tunable attractive (bonding) and repulsive (anti-bonding) forces can arise in highly asymmetric structures coupled to external radiation, a consequence of the bonding/anti-bonding level repulsion of guided-wave…
A tunnelling conductivity between a heavy fermion metal and a simple metallic point is considered. We show that at low temperatures this conductivity can be noticeably dissymmetrical with respect to the change of voltage bias. The…
We study resonant tunneling through a superconducting double barrier structure in graphene as a function of the system parameters. At each barrier, due to the proximity effect, an incident electron can either reflect as an electron or a…
A new mechanism of tunnelling at macroscopic distances is proposed for a wave packet localized in one-dimensional disordered potential with mirror symmetry, V(-x)=V(x). Unlike quantum tunnelling through a regular potential barrier, which…
We analyze resonant tunneling subject to a non-adiabatic time-dependent bias-voltage through an asymmetric single molecular quantum dot with coupling between the electronic and vibrational degrees of freedom using a {\em Tien-Gordon-type}…
Theoretical research on electronic properties in mesoscopic condensed matter systems has focused primarily on the electron charge freedom degrees, while its corresponding spin freedom degrees have not yet received the same attention.…
The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current,…
In this work, we study the resonant tunneling (RT) of electrons and H atoms in double-barrier (DB) systems. Our numerical calculations directly verify the correspondence between the resonant tunneling energies and the energy levels of…
There have been many studies of the linear response ac conductance of a double barrier resonant tunneling structure (DBRTS). While these studies are important, they fail to self-consistently include the effect of time dependent charge…
Tunneling two-level systems are ubiquitous in amorphous solids, and form a major source of noise in systems such as nano-mechanical oscillators, single electron transistors, and superconducting qubits. Occurance of defect tunneling despite…
Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the…
We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative…