Related papers: 3e tunneling processes in a superconducting single…
Cotunneling current through a resonant level coupled to either normal and superconducting or to two superconducting leads is studied for the domain of bias voltages, V, exceeding the superconducting gap, 2\Delta. Due to the on-site…
We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb blockade region. The cotunneling current appears like…
In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces…
Tunnelling of material particles through a classically impenetrable barrier constitutes one of the hallmark effects of quantum physics. When interactions between the particles compete with their mobility through a tunnel junction,…
We propose a circuit comprising a linear array of three small-capacitance superconducting tunnel junctions with miniature resistors (R > R_Q = h/4e^2 = 6.5 kOhm) attached to the ends of this array. Owing to the Coulomb blockade effect and…
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance…
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the…
The co-tunneling current through a two-level doubly occupied quantum dot weakly coupled to ferromagnetic leads is calculated in the Coulomb blockade regime. It is shown that the dependence of the differrential conductance on applied voltage…
We model a Superconducting Single-Electron Transistor operating by repulsive interactions. The device consists of a ring of Hubbard clusters, placed between electrodes and capacitively coupled to a gate potential. In each cluster, a pair of…
Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower…
Single-charge tunneling in ultrasmall voltage biased SIS junctions in a high-impedance electromagnetic environment is considered. The Cooper pair current is calculated at T=0 on the basis of the elementary tunnel Hamiltonian for…
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…
We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at…
We consider a superconducting persistent-current qubit consisting of a three-junction superconducting loop in an applied magnetic field. We show that by choosing the field, Josephson couplings, and offset charges suitably, we can perfectly…
We study transport through a Coulomb blockaded topologically nontrivial superconducting wire (with Majorana end states) contacted by metallic leads. An exact formula for the current through this interacting Majorana single-charge transistor…
Monte Carlo simulations and an analytical approach within the framework of a semiclassical model are presented which permit the determination of Coulomb blockade and single electron charging effects for multiple tunnel junctions coupled in…
At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…
The non linear charge transfer through a tunnel junction between two Luttinger systems is studied for repulsive, finite range interaction between electrons on the same, V_{11}, and on different,V_{12}, sides of the junction. Features of the…
We consider the transport spectroscopy of a quantum dot with an even number of electrons at finite bias voltage within the Coulomb blockade diamond. We calculate the tunneling current due to the elastic and inelastic co-tunneling processes…
The temperature dependence of the I-V characteristics of many single-electron tunneling devices enable thermometer operation of these systems. We investigate two normal conducting kinds of them, {\sl (a)} a single junction in a…