Related papers: Thin-Film Trilayer Manganate Junctions
Using the tight-binding approximation and the nonequilibrium Green's function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by a…
Polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) thin films were synthesized by pulsed laser ablation on single crystal (100) yttria-stabilized zirconia (YSZ) substrates to investigate the mechanism of magneto-transport in a granular…
FM1/NM/FM2 trilayers have garnered considerable attention because of their potential in spintronic applications. A thorough investigation of the spin transport properties of these trilayers is therefore important. Asymmetric trilayers,…
The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic…
Starting from the assumption that ferromagnetically correlated regions exist in manganites even in the absence of long-range magnetic order, we construct a model of charge transfer due to the spin-dependent tunnelling of charge carriers…
The influence of ballistic channels superimposed on tunneling conduction channels in magnetic tunnel junctions has been studied in a manganese oxide based tunneling device. Inversion of magnetoresistance has been observed in magnetic tunnel…
We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR…
Using Density functional theory and non-equilibrium Green's function formalism, spin dependent electron transport in Fe/Mo$_x$Cr$_{1-x}$S$_2$/Fe magnetic tunnel junction is studied. Spin transport for different thicknesses (1, 3, 5, and 7…
We consider a thin normal metal sandwiched between two ferromagnetic insulators. At the interfaces, the exchange coupling causes electrons within the metal to interact with magnons in the insulators. This electron-magnon interaction induces…
In an antiferromagnet (AF) with uniaxial anisotropy, spin-up and spin-down magnons coexist and form an intrinsic degree of freedom resembling electrons. When polarized by an adjacent ferromagnet (F), a magnonic pure spin current can be…
Atomic structure and electronic band structure are fundamental properties for understanding the mechanism of superconductivity. Motivated by the discovery of pressure-induced high-temperature superconductivity at 80 K in the bilayer…
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
Low-temperature magnetization (M) measurements down to 0.1 K have been performed in magnetic fields up to 14.5 T for a single piece of a tiny single-crystalline sample (0.2 mg weight) of the spin-gap system YbAl3C3. At the base temperature…
The effect of proximity of the magnetism of the Pr-based manganite (Pr0.6Sr0.4MnO3) on the superconductivity of Bi-based high-temperature superconductor (Bi1.75Pb0.25Sr2Ca2Cu3O10+d) was studied based on the results obtained from the…
I have successfully prepared (110) trilayers of \LSMO-\YBCO-\LSMO. Magnetization measurements on these samples reveal a stronger coupling between the ferromagnetic layers. The coupling is an order of magnitude higher than that seen in the…
A tight binding parametrization of local spin density functional band theory is combined with a dynamical mean field treatment of correlations to obtain a theory of the magnetic transition temperature, optical conductivity and T=0 spinwave…
We present calculations of spin-dependent electron transport through single organic molecules bridging pairs of iron nanocontacts. We predict the magnetoresistance of these systems to switch from positive to negative with increasing applied…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here we predict an extremely large resistance switching based on the relative spin-orbit splitting in twisted transition metal…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…