Related papers: Negative capacitance effect in semiconductor devic…
We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array.…
Coherent quantum phase slips are expected to lead to a blockade of dc conduction in sufficiently narrow superconducting nanowires below a certain critical voltage. We present measurements of NbN nanowires in which not only is a critical…
Precise in-situ control of system parameters is indispensable for all quantum hardware applications. The capacitance in a circuit, however, is usually a simple consequence of electrostatics, and thus quite literally cast in stone. We here…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
Low-temperature experiments are performed on novel nanoscale nonlinear devices (ballistic rectifiers) as well as nano-structured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A DC output is generated between the…
Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor…
Fluctuation effects in underdoped cuprates under high fields are examined by trying to fit theoretical results to resistivity and Nernst data in vortex states. The superconducting (SC) fluctuation in underdoped cuprates includes not only…
For semimetal nanowires with diameters smaller than a few tens of nanometers, a semimetal-to-semiconductor transition is observed as the emergence of an energy band gap resulting from quantum confinement. Quantum confinement in a semimetal…
The many-body ground state of a two-dimensional electron system can be tuned by Coulomb engineering through control of the dielectric environment. However, in conventional dielectrics the static permittivity is restricted to positive…
In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-called quantum noise, are much less analyzed. The…
The quantum rectification effect observed on asymmetric superconducting loops is proposed to use as a basic of a noise detector with maximum sensitivity. The measurements show that a critical amplitude of noise or ac current decreases down…
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…
A theory of the transient spectroscopy of quantum well (QW) structures under a large applied bias is presented. An analytical model of the initial part of the transient current is proposed. The time constant of the transient current depends…
Superconducting circuits have attracted growing interest in recent years as a promising candidate for fault-tolerant quantum information processing. Extensive efforts have always been taken to completely shield these circuits from external…
It is notoriously difficult to measure instantaneous supply current to a device such as an ASIC, FPGA, or CPU without also affecting the instantaneous supply voltage and compromising the operation of the device [21]. For decades designers…
The influence of charging effects on time-dependent transport in small semiconductor quantum dots with arbitrary level spectra is studied. Starting from an explicit time-dependent tunneling Hamiltonian, a non-Markovian Master equation is…
The description of a measuring process, such as that which occurs when a quantum point contact (QPC) detector is influenced by a nearby external electron which can take up two possible positions, provides a interesting application of the…
Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model…
Quantum capacitance is a fundamental quantity that can directly reveal many-body interactions among electrons and is expected to play a critical role in nanoelectronics. One of many tantalizing recent physical revelations about quantum…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…