Related papers: Quantum wires from coupled InAs/GaAs strained quan…
Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots…
Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state…
Lattice mismatch in layered semiconductor structures with submicron length scales leads to extremely high nonuniform strains. This paper presents a finite element technique for incorporating the effects of the nonuniform strain into an…
A model quantum wire embedded in a matrix permeable to electron waves is investigated in terms of electronic states. The wire is assumed to have a 1D crystal structure. Through electron waves propagating in its surroundings, lateral modes…
We report the detection of quantum confinement in single InAs-InP core-shell nanowires. The wires having an InAs core with ~25 nm diameter are characterized by emission spectra in which two peaks are identified under high excitation…
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
The theoretical studies of optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices with strain-induced lateral ordering are presented. Valence-band anisotropy, band mixing, and…
One dimensional (1D) quantum wires exhibit a conductance feature near 0.7 x 2e^2/h in connection with many-body interactions involving the electron spin. With the possibility of exploiting this effect for novel spintronic device…
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a…
Quantum dots are nanostructures made of semiconducting materials that are engineered to hold a small amount of electric charge (a few electrons) that is controlled by external gate and may hence be considered as tunable artificial atoms. A…
A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is…
We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…
Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to 0.7 X 2e^2/h in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of…
The prospect of using light to probe or manipulate quantum materials has become an active area of interest. Here, we investigate a quantum wire -- treated as a finite-sized one-dimensional electron gas -- that is coupled to a single…
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb…
Band edge and energy levels of truncated pyramidal In_x Ga_(1-x) As/GaAs (001) quantum dots are studied by single-band effective mass approach, and the dependence to stoichiometric percentages is investigated. It is shown that enhancement…
Optical properties of large arrays of isolated quantum dots are discussed in order to interpret the existent photoluminescence data. The presented theory explains the large observed shift between the lowest emission and absorption energies…
Recent advances in hydrogen lithography on silicon surfaces now enable the fabrication of complex and error-free atom-scale circuitry. The structure of atomic wires, the most basic and common circuit elements, plays a crucial role at this…