Related papers: Phase Transition in \nu=2 Bilayer Quantum Hall Sta…
We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs)…
We analyse the ground state of a particle in a double-well potential, with a cylindrical symmetry, and in the presence of a magnetic field. We find that the azimuthal quantum number m takes the values m = 0,1,2... when we increase the…
We have observed in a low density two-dimensional hole system (2DHS) of extremely high quality (with hole density p=1.6x10^{10} cm^{-2} and mobility \mu=0.8x10^6 cm^2/Vs) that, as the 2DHS is continuously tilted with respect to the…
Bilayer quantum Hall systems can form collective states in which electrons exhibit spontaneous interlayer phase coherence. We discuss the possibility of using bilayer quantum dot many-electron states with this property to create two-level…
We report the observation of a fully developed fractional quantum Hall state at $\nu=5/2$ in GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells with mobility well below $10^{7}$\thinspace cm$^{2}$/Vs. This is achieved either by strong illumination or…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the…
We report on the dramatic evolution of the quantum Hall ferromagnet in the fractional quantum Hall regime at $\nu = 2/5$ filling. A large enhancement in the characteristic timescale gives rise to a dynamical transition into a novel…
At low Landau level filling of a two-dimensional electron system, typically associated with the formation of an electron crystal, we observe local minima in Rxx at filling factors nu=2/11, 3/17, 3/19, 2/13, 1/7, 2/15, 2/17, and 1/9. Each of…
We study the fractional quantum Hall effect in a bilayer with charge-distribution imbalance induced, for instance, by a bias gate voltage. The bilayer can either be intrinsic or it can be formed spontaneously in wide quantum wells, due to…
We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling…
We studied a vertical ``quantum dot molecule'', where one of the dots is occupied with electrons and the other with holes. We find that different phases occur in the ground state, depending on the carrier density and the interdot distance.…
The $\nu=5/2$ fractional quantum Hall effect is a system of intense experimental and theoretical interest as its ground state may host non-abelian excitations, but the exact nature of the ground state is still undetermined. We present the…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the bandgap at a given electron density.…
We study a class of Abelian quantum Hall (QH) states which are topologically unstable (T-unstable). We find that the T-unstable QH states can have a phase transition on the edge which causes a binding between electrons and reduces the…
Fractional quantum Hall states (FQHS) with the filling factor nu = p/q of q < 21 are examined and their energies are calculated. The classical Coulomb energy is evaluated among many electrons; that energy is linearly dependent on 1/nu. The…
The fractional quantum Hall effect is observed at low field, in a regime where the cyclotron energy is smaller than the Coulomb interaction. The nu=5/2 excitation gap is measured to be 262+/-15 mK at ~2.6 T, in good agreement with previous…
We examine the quantum phase diagram of the fractional quantum Hall effect (FQHE) in the lowest two Landau levels in half-filled bilayer structures as a function of tunneling strength and layer separation, i.e., we revisit the lowest Landau…
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…
The fractional quantum Hall state (FQHS) observed in the lowest Landau level at filling factor $\nu=1/2$ in wide quantum wells has been enigmatic for decades because the two-dimensional electron system (2DES) has a bilayer charge…
We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity $\sigma_{xy}=\nu e^2/h$ (where $\nu$ is any…