Related papers: Electronic transport and the localization length i…
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer,…
We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$…
In this work, we perform a detailed study of heat transport in one dimensional long-ranged anharmonic oscillator systems, such as the long-ranged Fermi-Pasta-Ulam-Tsingou model. For these systems, the long-ranged anharmonic potential decays…
We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,\mu$m in length down to a few $\mu$m…
Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental…
We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs) of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping and screening techniques. We find that, even in the…
Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau…
Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd-vacancies…
Recent magneto-transport experiments on ultra-high mobility 2D electron systems in GaAs/AlGaAs heterostructures have revealed the existence of whole new classes of correlated many-electron states in highly excited Landau levels. These new…
The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically doped topological insulators. In these materials, precise…
The high-frequency conductivity of Si delta-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are…
At low temperatures in ultraclean GaAs-AlGaAs heterojunctions, high fractional Landau levels break rotational symmetry, leading to increasingly anisotropic transport properties as temperature is lowered below $\sim$150mK. While the onset of…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
The mechanism of the anomalous Hall transport phenomena, if it is of the intrinsic or extrinsic origin, has been controversial. We present a unified theory of them for ferromagnetic metals with dilute impurities at the zero temperature, in…
The Quantum Hall Effect (QHE) is a prototypical realization of a topological state of matter. It emerges from a subtle interplay between topology, interactions, and disorder. The disorder enables the formation of localized states in the…
In the conventional theory of hopping transport the positions of localized electronic states are assumed to be fixed, and thermal fluctuations of atoms enter the theory only through the notion of phonons. On the other hand, in 1D and 2D…
Temperature and magnetic field dependences of the conductivity in heavily doped, strongly disordered two-dimensional quantum well structures GaAs/In$_x$Ga$_{1-x}$As/GaAs are investigated within wide conductivity and temperature ranges. Role…
The dynamical transport properties near the integer quantum Hall transition are investigated at zero temperature by means of the Dirac fermion approach. These properties have been studied experimentally at low frequency omega and low…
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing…
We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band…