Related papers: Single-electron transistor effect in a two-termina…
Electron tunneling through mesoscopic metallic grains can be treated perturbatively only provided the tunnel junction conductances are sufficiently small. If it is not the case, fluctuations of the grain charge become strong. As a result…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
We present a theory of a single-electron transistor exchange-coupled to a localized spin. We show how to gain detailed quantitative knowledge about the attached spin such as spin size, exchange coupling strength, Land\'e g-factor, and spin…
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the…
We present a theory of single-electron tunneling transport through a ferromagnetic nanoparticle in which particle-hole excitations are coupled to spin collective modes. The model employed to describe the interaction between quasiparticles…
The present paper gives an elaborate theoretical description of a new molecular charge transport mechanism applying to a single molecule trapped between two macroscopic electrodes in a solid state device. It is shown by a Hubbard type model…
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…
Monte Carlo simulations and an analytical approach within the framework of a semiclassical model are presented which permit the determination of Coulomb blockade and single electron charging effects for multiple tunnel junctions coupled in…
It is shown that the voltage dependence of the tunneling conductance between two lightly doped semiconductors, which are separated by an large area tunneling barrier, can reveal the high energy part of the Coulomb gap if the barrier is…
We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances…
A model of a superconducting tunnel junction which refrigerates a nearby metallic island without any particle exchange is presented. Heat extraction is mediated by charge fluctuations in the coupling capacitance of the two systems. The…
We present numerical results on electron tunneling in a single-electron box at low temperature. The effective action of this device is equivalent to the Hamiltonian of a classical XY spin chain with long ranged interactions. Using an…
The influence of charging effects on time-dependent transport in small semiconductor quantum dots with arbitrary level spectra is studied. Starting from an explicit time-dependent tunneling Hamiltonian, a non-Markovian Master equation is…
We provide a direct proof of two-electron Andreev transitions in a superconductor - normal metal tunnel junction by detecting them in a real-time electron counting experiment. Our results are consistent with ballistic Andreev transport with…
The electronic structure of two vertically coupled quantum dots containing two electrons is investigated in the presence of interdot tunneling. Our approach also includes the interdot exchange and we find that the tunneling is affected by…
The lifetime of an electron pair could not be unlimited long, on the basis of this, we suggest a model. The model means that the movements of charge carriers in a superconductor should have three forms: the single-electron movement, the…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…
We study a tunnel contact that acts as charge detector for a single-electron transistor (SET) focusing on correlations between the detector current and the current through the SET. This system can be described fully by a Markovian master…
Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (< 2 nm) on atomically clean Si(100) substrates followed by annealing to ~800 degrees C. Scanning tunneling microscopy (STM) and…
In this work we investigate the phenomena associated with the new thresholds in the spectrum of excitations arising when different one-dimensional strongly interacting systems are voltage biased and weakly coupled by tunneling. We develop…