Related papers: Dephasing in Open Quantum Dots
The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads…
Electron-electron interactions play a major role in determining the low-temperature rate of phase loss of electrons in mesoscopic systems. The study of the dephasing rate is expected to contribute to the understanding of the many-body…
The compound $Nb_{5-\delta}Te_4$ ($\delta=0.23$) with quasi-one-dimensional crystal structure undergoes a transition to superconductivity at $T_c$=0.6--0.9 K. Its electronic transport properties in the normal state are studied in the…
We discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use an effective circuit model to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows…
The dephasing time of disordered two-dimensional electron gas in a modulated magnetic field is studied. It is shown that in the weak inhomogeneity limit, the dephasing rate is proportional to the field amplitude, while in strong…
We present a nonperturbative approach which allows to evaluate the weak localization correction to the conductivity of disordered conductors in the presence of interactions. The effect of the electron-electron interaction on the…
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the…
We study dephasing in electron transport through a large quantum dot (a Fabry-Perot interferometer) in the fractional quantum Hall regime with filling factor $2/3$. In the regime of sequential tunneling, dephasing occurs due to electron…
The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is…
Free-standing Bi$_2$Se$_3$ single crystal flakes of variable thickness are grown using a catalyst-free vapor-solid synthesis and are subsequently transferred onto a clean Si$^{++}$/SiO$_2$ substrate where the flakes are contacted in Hall…
Spin-flip scattering of charge carriers in metals with magnetic defects leads to the low-temperature saturation of the decoherence time, $\tau_\varphi$, of electrons at the value comparable to their spin relaxation time, $\tau_s$. In…
Interpretation of experiments on quantum dot (QD) lasers presents a challenge: the phonon bottleneck, which should strongly suppress relaxation and dephasing of the discrete energy states, often seems to be inoperative. We suggest and…
We show that the zero-point fluctuations of the intrinsic electromagnetic environment limit the phase coherence time in all mesoscopic systems at low temperatures. We derive this quantum noise limited dephasing time and its temperature…
Quantum coherence of electrons in ferromagnetic metals is difficult to assess experimentally. We report the first measurements of time-dependent universal conductance fluctuations in ferromagnetic metal (Ni$_{0.8}$Fe$_{0.2}$) nanostructures…
We present phase coherence time measurements in quasi-one-dimensional Ag wires doped with Fe Kondo impurities of different concentrations $n_s$. Due to the relatively high Kondo temperature $T_{K}\approx 4.3K$ of this system, we are able to…
We investigate the dephasing rate, 1/tau_phi, of weakly disordered electrons due to scattering from diluted dynamical impurities. Our previous result for the weak-localization dephasing rate is generalized from diluted Kondo impurities to…
We revisit the problem of inelastic times governing the temperature behavior of the weak localization correction and mesoscopic fluctuations in one- and two-dimensional systems. It is shown that, for dephasing by the electron electron…
We have studied the effect of thermal annealing on electron dephasing times $\tau_\phi$ in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using weak-localization…
The dephasing effect of metallic gates on electrons moving in one quasi--one--dimensional diffusive wires is analyzed. The incomplete screening in this geometry implies that the effect of the gate can be described, at high energies or…
We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate…