Related papers: Metal-Insulator Transition in a Low-Mobility Two-D…
The organic charge-transfer salt $\kappa$-(BEDT-TTF)$_{2}$Hg(SCN)$_{2}$Br is a quasi two-dimensional metal with a half-filled conduction band at ambient conditions. When cooled below $T=80$ K it undergoes a pronounced transition to an…
The out-of-equilibrium excess conductance of electron-glasses typically relaxes with a logarithmic time-dependence. Here it is shown that the log(t) relaxation of a weakly-disordered amorphous indium-oxide films crosses-over asymptotically…
In strongly correlated electronic systems, such as manganites, the global transport behavior depends sensitively on the spin ordering, whose alteration often requires a large external magnetic field. Here we show that the spin ordering in…
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections…
Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of…
We present well-controlled results on the metal to insulator transition (MIT) within the paramagnetic solution of the dynamical cluster approximation (DCA) in the two-dimensional Hubbard model at half-filling. In the strong coupling regime,…
The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating…
First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain…
The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of…
We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical endpoint…
Motivated by recent experimental data on thin film superconductors and oxide interfaces we propose a random-resistor network apt to describe the occurrence of a metal-superconductor transition in a two-dimensional electron system with…
We investigate the behavior of the thermoelectric power [S] in disordered systems close to the Anderson-type metal-insulator transition [MIT] at low temperatures. In the literature, we find contradictory results for S. It is either argued…
We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…
We have studied the magnetic-field-tuned superconductor-insulator quantum transition (SIT) in amorphous In-O films with different oxygen content and, hence, different electron density. While for states of the film near the zero-field SIT…
We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while…
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…
Metal-insulator transitions driven by disorder (Delta) and/or by electron correlations (U) are investigated within the Anderson-Hubbard model with local binary-alloy disorder using a simple but consistent mean-field approach. The Delta-U…
We utilize a glass-like structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br. In this material, the terminal ethylene…
We analyze the unanalytical structure of metal-insulator transition (MIT) in infinite dimensions. By introducing a simple transformation into the dynamical mean-field equation of Hubbard model, a multiple-valued structure in Green's…
We have measured the electrical conductivity of Ge:Ga samples prepared by neutron-transmutation doping of isotopically enriched 70Ge single crystals in order to study the metal-insulator transition (MIT) ruling out an ambiguity due to…