Related papers: Low temperature STM on InAs (110) accumulation sur…
The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, we study the electronic structure of InAs(001), InAs(111), and…
Based on a Fermi liquid picture, the temperature effect on the impurity-induced spatial modulation of local density of states (LDOS) is investigated for the d-wave superconductor Bi$_2$Sr$_2$CaCu$_2$O$_8$, in the context of scanning…
We employ a scanning tunnelling microscope (STM) cooled to millikelvin temperatures by an adiabatic demagnetization refrigerator (ADR) to perform scanning tunnelling spectroscopy (STS) on an atomically clean surface of Al(100) in a…
We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni…
This report deals with the preparation of a clean Ta(110) surface, investigated by means of scanning tunneling microscopy/spectroscopy as well as by low-energy electron diffraction and Auger electron spectroscopy. The surface initially…
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2X4) and c(4X4) surface reconstructions.…
We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two…
The molecular structure of the wetting layer of ice on Pt(111) is resolved using scanning tunneling microscopy (STM). Two structures observed previously by diffraction techniques are imaged for coverages at or close to completion of the…
Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is…
The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate ($R$) decreases…
Band profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a device at the nanometer scale is highly demanded. Conventional…
We have performed broad-band zero-field and magneto-infrared spectroscopy of the three dimensional topological insulator Bi$_{0.91}$Sb$_{0.09}$. The zero-field results allow us to measure the value of the direct band gap between the…
Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a…
We present a low-temperature scanning tunneling spectroscopy study of the Au(111) and of the Cu(111) surface states showing that their binding energy increases when the tip is approached towards the surface. This result, supported by a…
We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus…
Topological insulators with their topological protected surface states are highly promising quantum materials. In this article the micro-flakes of single-crystalline topological insulators Bi2Te3 and Sb2Te3 are explored through physical…
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate…
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good…
We study the light emission from a Ag(111) surface when the bias voltage on a scanning tunneling microscope (STM) junction is ramped into the field emission regime. Above the vacuum level, scanning tunneling spectroscopy (STS) shows a…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…