Related papers: Frictional drag between quantum wells mediated by …
We discuss the role of electron-electron and electron-phonon correlations in current flow in the Coulomb Blockade regime, focusing specifically on nontrivial signatures arising from the break-down of mean-field theory. By solving transport…
Flat-band (FB) materials have emerged as promising platforms for exploring exotic quantum phases. While numerous candidates have recently been identified through spectroscopic techniques such as angle-resolved photoemission spectroscopy,…
The first order contribution to frictional drag in bi-layered fermion gas is examined. We discuss the relevance of single photon exchange in the evaluation of transresistance, which is usually explained by second order effects such as…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded non-interacting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering…
Using the semiclassical quantum Boltzmann equation (QBE), we numerically calculate the DC transport properties of bilayer graphene near charge neutrality. We find, in contrast to prior discussions, that phonon scattering is crucial even at…
Electronic and thermal transport properties in two-dimensional (2D) semiconductors have been extensively investigated due to their potential to miniaturize transistors. Microscopically, electron-phonon interactions are considered the…
The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of…
We analyze the effect of electron-phonon coupling on the full counting statistics of a molecular junction beyond the lowest order perturbation theory. Our approach allows to take into account analytically the feedback between the…
Understanding collective phenomena in quantum materials from first principles is a promising route toward engineering materials properties on demand and designing new functionalities. This work examines the quantum paraelectric state, an…
The kinetic transport of electrons through graphene magnetic barriers is studied theoretically in presence of an external time harmonic scalar potential. The transmission coefficients are calculated in the framework of the non-perturbative…
We investigate the effect of electron- $\mathrm{A}_{1g}$ phonon coupling on the gapless electronic band dispersion of the pristine graphene. The electron-phonon interaction is introduced through a Kekul\'{e}-type distortion giving rise to…
The interaction between localized spins on a quantum dot and free electrons in the reservoirs forms a many-particle entangled system giving rise to the Kondo effect. Here, we investigate electron transport in the third shell of a…
The interactions among lattice, charge, and spin degrees of freedom fundamentally shape material properties. In FeSe, symmetry-breaking perturbations serve as highly sensitive probes of these couplings. Previous work has shown that defects…
Two-dimensional (2D) materials have shown great potential in applications as transistors, where thermal dissipation becomes crucial because of the increasing energy density. Although thermal conductivity of 2D materials has been extensively…
We have theoretically studied phonon-mediated spin-flip processes of electrons in a GaAs double quantum dot (DQD) holding two spins, under a phonon temperature gradient over the DQD. Transition rates of inter-dot phonon-assisted tunnel…
Expressions for the electron power loss F(T) and mobility {\mu}_p due to acoustic phonon scattering are given in the Bloch-Gr\"uneisen (BG) regime for three- and two- dimensional electron gas in semiconductors and Dirac-fermions. We obtain…
This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method,…
Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is…
An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around…