Related papers: Minimum Metallic Mobility in a Two-Dimensional Ele…
We study the quantum Hall liquid and the metal-insulator transition in a high mobility two dimensional electron gas, by means of photoluminescence and magneto-transport. In the integer and fractional regime at nu > 1/3, analyzing the…
The influence of Coulomb interaction on transport properties of spinless electrons in small disordered two dimensional systems is studied within a tight binding model. Spatial correlations, inverse participation ratio, and multifractal…
The 2D metal-insulator transition can be induced either by decreasing the carrier density or by increasing the spin polarization by applying a magnetic field parallel to the plane. Using experimental results for the shift in critical…
We consider low-temperature behavior of weakly interacting electrons in disordered conductors in the regime when all single-particle eigenstates are localized by the quenched disorder. We prove that in the absence of coupling of the…
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…
We have investigated the local magneto-transport in high-quality 2D electron systems at low carrier densities. The positive magneto-resistance in perpendicular magnetic field in the strongly insulating regime has been measured to evaluate…
Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low…
The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…
Vanadium dioxide (VO$_2$) undergoes a metal-insulator transition (MIT) at 340 K with the structural change between tetragonal and monoclinic crystals as the temperature is lowered. The conductivity $\sigma$ drops at MIT by four orders of…
We investigate the spin-dependent transport properties of a two-dimensional electron gas formed at oxides' interface in the presence of a magnetic field. We consider several scenarios for the oxides' properties, including oxides with…
Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…
We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…
A recently found metal-insulator transition in a model for cyclotron resonance in a two-dimensional periodic potential is investigated by means of spectral properties of the time evolution operator. The previously found dynamical signatures…
Electrical resistivity as a function of temperature, pressure, and magnetic field was measured in high and low purity single crystals of BaVS$_3$ close to the critical pressure value $p_{cr}$$\approx$2 GPa, associated with the zero…
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the…
We investigate ultrathin superconducting TiN films, which are very close to the localization threshold. Perpendicular magnetic field drives the films from the superconducting to an insulating state, with very high resistance. Further…
An electron transport is studied in the system which consists of scanning tunneling microscopy-single molecule magnet-metal. Due to quantum tunneling of magnetization in single-molecule magnet, linear response conductance exhibits stepwise…