Related papers: Mott-Hubbard insulators for systems with orbital d…
We consider the one-band Hubbard model on the square lattice by using variational and Green's function Monte Carlo methods, where the variational states contain Jastrow and backflow correlations on top of an uncorrelated wave function that…
Magnetic phase diagram and Mott transition are studied in the Hubbard model on the anisotropic triangular lattice at zero temperature and half-filling by the variational cluster approximation, taking into account N\'eel, 120$^\circ$ N\'eel,…
The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…
We study the optical response of a Mott Hubbard system in the framework of the half--filled Extended Hubbard Model using the Density Matrix Renormalization Group (DMRG) method. We discuss the appearance of excitonic features inside the…
Recent investigations suggest that both spin-orbit coupling and electron correlation play very crucial roles in the $5d$ transition metal oxides. By using the generalized Gutzwiller variational method and dynamical mean-field theory with…
A theory for the Hubbard model appropriate in the limit of large U/t, small doping away from half-filling and short-ranged antiferromagnetic spin correlations is presented. Despite the absence of any broken symmetry the Fermi surface takes…
We develop a non-perturbative numerical method to study tunneling of a single electron through an Aharonov-Bohm ring where several strongly interacting electrons are bound. Inelastic processes and spin-flip scattering are taken into…
We study the critical behaviour of the \SUN{} generalization of the one-dimensional Hubbard model with arbitrary degeneracy $N$. Using the integrability of this model by Bethe Ansatz we are able to compute the spectrum of the low-lying…
The ionic Hubbard model is a paradigmatic setup for studying the competition between band and Mott insulating behavior. Within the variationally exact in infinite dimensions Gutzwiller approximation, we derive a compact analytic expression…
We take advantage of recent improvements in the grand canonical Hybrid Monte Carlo algorithm, to perform a precision study of the single-particle gap in the hexagonal Hubbard model, with on-site electron-electron interactions. After…
A one-dimensional model of interacting electrons with on-site $U$, nearest-neighbor $V$, and pair-hopping interaction $W$ is studied at half-filling using the continuum limit field theory approach. The ground state phase diagram is obtained…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved…
We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a…
The low-temperature equilibrial state of a system of small metal grains, embedded into insulator, is studied. We find, that the grains may be charged due to the fluctuations of the surface energy of electron gas in grains, rather than…
We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites,…
The Roth's two-pole approximation has been used by the present authors to study the effects of the hybridization in the superconducting properties of a strongly correlated electron system. The model used is the extended Hubbard model which…
We study the optical conductivity of the one-band Hubbard model in the N\'eel state at half filling at T=0 using the dynamical mean-field theory. For small values of the Coulomb parameter clear signatures of a Slater insulator expected from…
With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…
Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to…
We outline a general mechanism for Orbital-selective Mott transition (OSMT), the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of…