Related papers: Single-Electron Traps: A Quantitative Comparison o…
We present results of atomic-level simulations of damage formation along the paths of swift heavy ions (SHI) decelerated in the electronic stopping regime in amorphous polyethylene. The applied model combines the Monte-Carlo code TREKIS-3,…
We utilize the combination of two standard trapping techniques, a magnetic trap and an optical trap in a Raman setup, to propose a versatile and tunable trap for cold atoms. The created potential provides several advantages over…
Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…
The presence of quasiparticles in superconducting qubits emerges as an intrinsic constraint on their coherence. While it is difficult to prevent the generation of quasiparticles, keeping them away from active elements of the qubit provides…
We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…
Molecular systems can exhibit a complex, chemically tailorable inner structure which allows for targeting of specific mechanical, electronic and optical properties. At the single-molecule level, two major complementary ways to explore these…
We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…
Trapping of microparticles and aerosols is of great interest for physics and chemistry. We report microparticle trapping in multipole linear Paul trap geometries, operating under Standard Ambient Temperature and Pressure (SATP) conditions.…
Tunneling of electrons through the barriers in heterostructures has been studied, within unified transfer matrix approach. The effect of barrier width on the transmission coefficient of the electrons has been investigated for different…
In many superconducting devices, including qubits, quasiparticle excitations are detrimental. A normal metal ($N$) in contact with a superconductor ($S$) can trap these excitations; therefore such a trap can potentially improve the devices…
We calculate the average number of electrons on a metallic single-electron-box as a function of the gate voltage for arbitrary values of the tunneling conductance. In the vicinity of the plateaus the problem is equivalent to calculating the…
We report a combined electronic transport and structural characterization study of small carbon nanotube bundles in field-effect transistors (FET). The atomic structures of the bundles are determined by electron diffraction using an…
We use single track laser melting experiments and simulations on Inconel 625 to estimate the dimensions and microstructures of the resulting melt pools. Our work is based on a design-of-experiments approach which uses multiple laser power…
Modeling of electron transport through organic molecules is presented in order to interpret the experimental data of Rosink et al. [PRB 62, 10459 (2000)]. Such results are understand as coherent off-resonance tunneling through the junction…
Our work analyzes the potential of ion traps for the experimental simulation of non-equilibrium phase transitions observed in certain spin-chain models which can be mapped to free-fermion systems. In order to make the dynamics more…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for…
An effective mass based model accounting for the conduction band quantization in a high aspect ratio semiconductor nanotip is developed to describe injected electron transport and subsequent electron emission from the nanotip. A transfer…
Recent core-hole-clock experiments [Phys. Rev. Lett. $\textbf{112}$, 086801 (2014)] showed that the spin dependence of electron injection times at Ar/Co(0001) and Ar/Fe(110) interfaces is at variance with the expectations based on previous…
We investigated the electrical properties of a unipolar organic device with traps that were intentionally inserted into a particular position in the device. Depending on their inserted position, the traps significantly alter the charge…