Related papers: Competition between the Mott transition and the An…
The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean…
The effect of disorder on the electronic properties near the Mott transition is studied in an organic superconductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, which is systematically irradiated by X-ray. We observe that X-ray irradiation…
The phase diagram of correlated, disordered electrons is calculated within dynamical mean--field theory using the geometrically averaged (''typical'') local density of states. Correlated metal, Mott insulator and Anderson insulator phases,…
We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…
We reinvestigate the competition between the Mott and the Anderson insulator state in a one-dimensional disordered fermionic system by a combination of instanton and renormalization group methods. Tracing back both the compressibility and…
The effect of an alternating potential on a one-dimensional half-filled Hubbard model with repulsive interaction has been examined by applying the renormalization group method to the bosonized Hamiltonian. The electronic state, which is…
We study the role of electronic correlation in a disordered two-dimensional model by using a variational wave function that can interpolate between Anderson and Mott insulators. Within this approach, the Anderson-Mott transition can be…
We consider the change in electron localization due to the presence of electron-electron repulsion in the \HA model. Taking into account local Mott-Hubbard physics and static screening of the disorder potential, the system is mapped onto an…
We study the interplay of disorder and interaction effects including bosonic degrees of freedom in the framework of a generic one-dimensional transport model, the Anderson-Edwards model. Using the density-matrix renormalization group…
We investigate, by numerically calculating the charge stiffness, the effects of random diagonal disorder and electron-electron interaction on the nature of the ground state in the 2D Hubbard model through the finite size exact…
The Mott metal-insulator transition is a typical strong correlation effect triggered by the Umklapp scattering. However, in a physical system, the Umklapp scattering coexists with the normal scattering, including both forward and backward…
We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…
We study the ground-state properties of an extended periodic Anderson model to understand the role of Hund's coupling between localized and itinerant electrons using the density-matrix renormalization group algorithm. By calculating the von…
Most of our quantitative understanding of disorder-induced metal-insulator transitions comes from numerical studies of simple noninteracting tight-binding models, like the Anderson model in three dimensions. An important outstanding problem…
Real materials always contain, to some extent, randomness in the form of defects or irregularities. It is known since the seminal work of Anderson that randomness can drive a metallic phase to an insulating one, and the mechanism…
We study the ground state phase diagram of the Anderson-Hubbard model with correlated hopping at half filling in one-dimension. The Hamiltonian has a local Coulomb repulsion $U$ and a disorder potential with local energies randomly…
We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…
We present a detailed, quantitative study of the competition between interaction- and disorder-induced effects in electronic systems. For this the Anderson-Hubbard model with diagonal disorder is investigated analytically and by Quantum…
We review our recent results on Anderson localization in systems of two interacting particles coupled by contact interactions. Based on an exact mapping to an effective single-particle problem, we numerically investigate the occurrence of…
We consider a 2d dipolar system, $d=2$, with the generalized dipole-dipole interaction $\sim r^{-a}$, and the power $a$ controlled experimentally in trapped-ion or Rydberg-atom systems via their interaction with cavity modes. We focus on…