Related papers: Quantum Hall effect in single wide quantum wells
This paper has its motivation in the study of the Fractional Quantum Hall Effect. We consider 2D quantum particles submitted to a strong perpendicular magnetic field, reducing admissible wave functions to those of the Lowest Landau Level.…
We study the influence of quantizing perpendicular magnetic fields on the ground state of a bilayer with electron and hole fluids separated by an opaque tunnel barrier. In the absence of a field, the ground state at low carrier densities is…
We compare the energies of different electron solids, such as bubble crystals with triangular and square symmetry and stripe phases, to those of correlated quantum liquids in partially filled intermediate Landau levels. Multiple transitions…
Mixing of Landau levels has been understood to be essential in governing the nature of the ground state for the even-denominator fractional quantum Hall effect. The incompressibility of the ground state at filling factor $5/2$ in the strong…
Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of…
Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($\nu$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $\nu=1/2$…
We have introduced a controllable nano-scale incursion into a potential barrier imposed across a two-dimensional electron gas, and report on the phenomena that we observe as the incursion develops. In the quantum Hall regime, the…
The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the $14$-band ${\bf k}\cdot{\bf p}$ approach without making the axial…
Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($\nu$) display a remarkable dependence on the symmetry of the electron charge…
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized…
An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in…
The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground…
To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
Physics of two-dimensional electron gases under perpendicular magnetic field often displays three distinct stages when increasing the field amplitude: a low field regime with classical magnetotransport, followed at intermediate field by a…
We have measured the Hall-plateau width and the activation energy of the bilayer quantum Hall (BLQH) states at the Landau-level filling factor $\nu=1$ and 2 by tilting the sample and simultaneously changing the electron density in each…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings \nu=8/3 and 7/3 in a series of high quality quantum wells. In the density range…
The $\nu=5/2$ fractional quantum Hall effect is a system of intense experimental and theoretical interest as its ground state may host non-abelian excitations, but the exact nature of the ground state is still undetermined. We present the…
We examine the quantum phase diagram of the fractional quantum Hall effect (FQHE) in the lowest two Landau levels in half-filled bilayer structures as a function of tunneling strength and layer separation, i.e., we revisit the lowest Landau…