Related papers: Full capacitance matrix of coupled quantum dot arr…
We investigate theorerically the non-equilibrium transport through a molecular quantum dot as a function of gate and bias voltage, taking into account the typical situation in molecular electronics. In this respect, our study includes…
Semiconductor quantum dots are favorable candidates for quantum information processing due to their long coherence time and potential scalability. However, the calibration and characterization of interconnected quantum dot arrays have…
Coulomb coupled quantum dot arrays with staircase ground state configuration have been proposed in literature for enhancing heat-harvesting and refrigeration performance. However, due to their mutual Coulomb interaction, a performance…
We show that a scalable photonic crystal nanocavity array, in which single embedded quantum dots are coherently interacting, can perform as an universal single-operation quantum gate. In a passive system, the optical analogue of…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
We predict large regions of the charge stability diagram using a multi-band and multi-electron configuration interaction model of a double quantum dot system. We account for many-body interactions within each quantum dot using full…
We obtain analytic formulae for the spacing between conductance peaks in the Coulomb blockade regime, based on the universal Hamiltonian model of quantum dots. New random matrix theory results are developed in order to treat correlations…
A general expression is given for the change in free energy when a charge tunnels through a junction in a one-dimensional array of N metallic islands with arbitrary capacitances and arbitrary background charges. This is used to obtain…
Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the $I$--$V$ characteristics is found to strongly depend on the polarity of the…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…
We study the equilibrium properties of a quantum dot connected to a bulk lead by a single-mode quantum point contact. The ground state energy and other thermodynamic characteristics of the grain show periodic dependence on the gate voltage…
Semiconductor quantum dot arrays are a leading architecture for the development of quantum technologies. Over the years, the constant capacitance model has served as a fundamental framework for simulating, understanding, and navigating the…
Unbiased stochastic sampling of the one- and two-body reduced density matrices is achieved in full configuration interaction quantum Monte Carlo with the introduction of a second, "replica" ensemble of walkers, whose population evolves in…
We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information…
We calculate the nonlinear cotunneling conductance through interacting quantum dot systems in the deep Coulomb blockade regime using a rate equation approach based on the T-matrix formalism, which shows in the concerned regions very good…
We propose a simple approach to study the conductance through an array of $N$ interacting quantum dots, weakly coupled to metallic leads. Using a mapping to an effective site which describes the low-lying excitations and a slave-boson…
Molecular dynamics (MD) simulations of complex electrochemical systems, such as ionic liquid supercapacitors, are increasingly including the constant potential method (CPM) to model conductive electrodes at specified potential difference,…
We derive general expressions for the current and shot noise, taking into account non-Markovian memory effects. In generalization of previous approaches our theory is valid for arbitrary Coulomb interaction and coupling strength and is…
An accurate model of a vertical pillar quantum dot is described. The full three dimensional structure of the device containing the dot is taken into account and this leads to an effective two dimensional model in which electrons move in the…
The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current,…