Related papers: Edge State Transport in Separately Contacted Doubl…
We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $\Delta_1$ and $\Delta_2$. We consider two main situations, $\Delta_1=0,\Delta_2\neq0$ and $\Delta_1=-\Delta_2$. They are…
At small layer separations, the ground state of a nu=1 bilayer quantum Hall system exhibits spontaneous interlayer phase coherence and has a charged-excitation gap E_g. The evolution of this state with increasing layer separation d has been…
We use a method of matched asymptotics to determine the energy gap of two counter-propagating, strongly interacting, quantum Hall edge states. The microscopic edge state dispersion and Coulomb interactions are used to precisely constrain…
The possibility of the existence of states with a spontaneous interlayer phase coherence in multilayer electron systems in a high perpendicular to the layers magnetic field is investigated. It is shown that phase coherence can be…
Devices exhibiting the integer quantum Hall effect can be modeled by one-electron Schroedinger operators describing the planar motion of an electron in a perpendicular, constant magnetic field, and under the influence of an electrostatic…
We consider interacting, charged spins on a torus described by a gapped Hamiltonian with a unique groundstate and conserved local charge. Using quasi-adiabatic evolution of the groundstate around a flux-torus, we prove, without any…
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized…
We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…
Many-body effects on tunneling of electrons in semiconductor nanowhiskers are investigated in a magnetic quantum limit. We consider the system with which bulk and edge states coexist. We show that interaction parameters of edge states are…
We study the problem of resonant tunneling between a Fermi liquid and the edge of a $\nu=1/3$ fractional quantum Hall state. In the limit of weak coupling, the system is adequately described within the sequential tunneling approximation. At…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
Devices exhibiting the integer quantum Hall effect can be modeled by one-electron Schroedinger operators describing the planar motion of an electron in a perpendicular, constant magnetic field, and under the influence of an electrostatic…
We investigate lateral p-n junctions, electrostatically defined in 14 nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p-n junctions resistances are close to $h/2e^2$, consistent with some previous experiments on…
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states where the spin of the charge carriers is locked to their direction of motion. In order to probe the properties of the edge modes, we propose a…
Periodic driving fields can induce topological phase transitions, resulting in Floquet topological phases with intriguing properties such as very large Chern numbers and unusual edge states. Whether such Floquet topological phases could…
Questions on the nature of edge reconstruction and "where does the current flow" in the quantum Hall effect (QHE) have been debated for years. Moreover, the recent observation of proliferation of "upstream" neutral modes in the fractional…
Theory predicts that quasiparticle tunneling between the counter-propagating edges in a fractional quantum Hall state can be used to measure the effective quasiparticle charge e* and dimensionless interaction parameter g, and thereby…
We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal…
Quantum Hall edge states have some characteristic features that can prove useful to measure and control solid state qubits. For example, their high voltage to current ratio and their dissipationless nature can be exploited to manufacture…
Filling factor $\nu=1$ incompressible states in ideal bilayer quantum Hall systems have spontaneous interlayer phase coherence and can be regarded either as easy-plane pseudospin ferromagnets or as condensates of excitons formed from…