Related papers: Calculated Schwoebel barriers on Si(111) steps usi…
By using an exact solution to the time-dependent Schr\"{o}dinger equation with a point source initial condition, we investigate both the time and spatial dependence of quantum waves in a step potential barrier. We find that for a source…
Experiments performed by friction force microscopy at atomic-scale surface steps on graphite, MoS$_2$, and NaCl in ambient conditions are presented. Both step-down and step-up scans exhibit higher frictional forces at the edge, but…
We demonstrate that for surfaces that have a nonzero Schwoebel barrier the application of an ac field parallel to the surface induces a net electro- migration current that points in the descending step direction. The magnitude of the…
We analyze the quantum-mechanical behavior of a system described by a one-dimensional asymmetric potential constituted by a step plus (i) a linear barrier or (ii) an exponential barrier. We solve the energy eigenvalue equation by means of…
The random deposition model must be enriched to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to…
Quantum decay rates for barrier potentials driven by external stochastic and periodic forces in the strong damping regime are studied. Based on the recently derived quantum Smoluchowski equation [Phys. Rev. Lett. {\bf 87}, 086802 (2001)]…
This Communication reports a geometrical factor that is necessary in the diffusion boundary condition across surface steps. Specifically, this factor relates adatom concentration to its spatial gradient at a surface step, and it describes…
Starting from a detailed model for the kinetics of a step edge or island boundary, we derive a Gibbs-Thomson type formula and the associated step stiffness as a function of the step edge orientation angle, $theta$. Basic ingredients of the…
We investigate the nonlinear evolution of the Bales-Zangwill instability, responsible for the meandering of atomic steps on a growing vicinal surface. We develop an asymptotic method to derive, in the continuous limit, an evolution equation…
The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both…
We study a recently proposed nonlinear evolution equation describing the collective step meander on a vicinal surface subject to the Bales-Zangwill growth instability [O. Pierre-Louis et al., Phys. Rev. Lett. (80), 4221 (1998)]. A careful…
We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier…
The results of a detailed study of the topological insulator Bi$_2$Se$_3$ surface state energy structure in the vicinity of surface steps using scanning tunneling microscopy and spectroscopy methods are presented. An increase in the…
In equilibrium, the physical properties of matter are set by the interactions between the constituents. In contrast, the energy input of the individual components controls the behavior of synthetic or living active matter. Great progress…
We present first-principles total-energy electronic-structure calculations that provide the microscopic mechanism of the adatom interchange reaction on the Sn- and Pb-covered Ge(111)-(2x8) and the Sb-covered Si(111)-(7x7) surfaces with and…
A solid-on-solid model of epitaxial growth in 1+1 dimensions is investigated in which slope dependent upward and downward particle currents compete on the surface. The microscopic mechanisms which give rise to these currents are the…
Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the…
The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability…
We develop the novel method of artificial barriers for scalar stochastic differential equations (SDEs) and use it to construct boundary-preserving numerical schemes for strong approximation of scalar SDEs, possibly with non-globally…
Fundamental interest for 2D electron gas (2DEG) systems has been recently renewed with the advent of 2D materials and their potential high-impact applications in optoelectronics. Here, we investigate a 2DEG created by the electron transfer…