Related papers: Raman continuum in high-$T_c$ superconductors

We present results of Raman scattering experiments in differently doped Bi-2212 single crystals. Below Tc the spectra show pair-breaking features in the whole doping range. The low frequency power laws confirm the existence of a…

The doping and temperature dependence of the electronic Raman response in cuprate superconductors is studied within the framework of the kinetic energy driven superconducting mechanism for the t-J model. It is shown that the temperature…

Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of…

The electronic Raman scattering of Borocarbide superconductors is studied based on the weak coupling theory with $s+g$-wave gap symmetry. The low energy behaviors and the relative peak positions can be naturally understood, while the…

Single crystalline Tl2Ba2Ca2Cu3O10 was studied using electronic Raman scattering. The renormalization of the scattering continuum was investigated as a function of the scattering geometry to determine the superconducting energy gap…

We have performed polarized Raman scattering measurements on WTe$_2$, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A$_1$ phonon modes and 2 A$_2$ phonon modes out of 33 Raman active modes,…

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak…

We have performed polarized Raman scattering measurements on the newly discovered superconductor Ba$_{2}$Ti$_{2}$Fe$_{2}$As$_{4}$O$_{2}$ ($T_c = 21$ K). We observe seven out of eight Raman active modes, with frequencies in good accordance…

We have performed polarized Raman scattering measurements on the newly discovered superconductor Ta$_{4}$Pd$_{3}$Te$_{16}$ ($T_c = 4.6$ K). We observe twenty-eight out of thirty-three Raman active modes, with frequencies in good accordance…

Using polarization-resolved electronic Raman scattering we study under-doped, optimally-doped and over-doped Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ samples in the normal and superconducting states. We show that low-energy nematic fluctuations are…

Based on a two-band model, we study the electronic Raman scattering intensity in both normal and superconducting states of iron-pnictide superconductors. For the normal state, due to the match or mismatch of the symmetries between band…

The doping dependence of the micro-Raman spectra of high quality La_{2-x}Sr_xCuO_4 microcrystals with x=0.0-0.45 has been investigated in the region 10-300 K. The phonon at ~100 cm^{-1} of the orthorhombic phase shows a classical soft mode…

Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density…

Polarized Raman scattering has been performed on CaC6 superconductor. We identify two of the three Raman active Eg phonon modes at 440 and 1508 cm-1 expected for the R-3m space group of CaC6. These first order scattering modes appear along…

We calculate the Raman spectrum of the two-dimensional (2D) spin-1/2 Heisenberg antiferromagnet by exact diagonalization and quantum Monte Carlo techniques on clusters of up to 144 sites and, on a 16-site cluster, by considering the…

We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…

We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a…

The temperature dependent frequency shifts of the Raman active G-band have recently been measured by R.Walter et al. for single-walled carbon nanotubes containing different concentrations of the magnetic impurity Ni:Co. These Raman data can…

Electronic Raman scattering experiments in a wide variety of materials (ranging from mixed-valence materials to Kondo insulators to high-temperature superconductors) show anomalous behavior in the B_{1g} channel when the system is on the…

Phonon spectra have been investigated by micro-Raman scattering from 290 to 20K. New peaks at 500 and 674 cm-1 appear below 250K in MgB2. These peaks are explained by the Fermi resonance, where Raman-active E2g intereacts with the overtone…