Related papers: Hall Coefficient in the doped Mott Insulator
The doping and temperature dependence of the Hall coefficient, RH, and ab-plane resistivity in the normal state down to 350mK is reported for oriented films of the electron-doped high-Tc superconductor Pr2-xCexCuO4+d. The doping dependence…
Efforts to understand the microscopic origin of superconductivity in the cuprates are dependent on knowledge of the normal state. The Hall number in the low temperature, high field limit $n_{\rm H}(0)$ has a particular significance because…
The Tomonaga--Luttinger parameter $K_{\rho}$ determines the critical behavior in quasi one-dimensional correlated electron systems, e.g., the exponent $\alpha$ for the density of states near the Fermi energy. We use the numerical…
We compute the zero temperature phase diagram and the Hall response of the doped perovskite manganites within the model of double exchange and Jahn-Teller coupling, employing the large dimensionality approximation proposed by Millis et al.…
This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong…
We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the…
We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…
A family of models is proposed to describe the motion of holes in a fluctuating quantum dimer background on the square lattice. Following Castelnovo et al. [Ann. Phys. (NY) 318, 316 (2005)], a generalized Rokhsar-Kivelson Hamiltonian at…
We investigate the Hatsugai-Kohmoto (HK) model on a square lattice, which describes both a Mott insulator at half-filling and a non-Fermi liquid phase on doping. Through the solution of this exactly solvable model with the inclusion of…
Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+\delta}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping…
In the organic superconducting \kappa-(BEDT-TTF) compounds, various transport phenomena exhibit striking non-Fermi liquid behaviors, which should be the important clues to understanding the electronic state of this system. Especially, the…
Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall…
Using the Chalker-Coddington network model as a drastically simplified, but universal model of integer quantum Hall physics, we investigate the plateau-to-insulator transition at strong magnetic field by means of a real-space…
The dispersion relation of a doped hole in the half-filled 2D Hubbard model is shown to follow a k^4 law around the (0,pi) and (pi,0) points in the Brillouin zone. Upon addition of pair-hopping processes this dispersion relation is unstable…
We apply the Worldvolume Hybrid Monte Carlo (WV-HMC) method [arXiv:2012.08468] to the two-dimensional Hubbard model, which is known to suffer from a severe sign problem when the system is doped (away from half filling). We show that the…
As primarily an electronic observable, the room-temperature thermopower $S$ in cuprates provides possibilities for a quantitative assessment of the Hubbard model. Using determinant quantum Monte Carlo, we demonstrate agreement between…
We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…
The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the…
The Hall conductivity in a weak homogeneous magnetic field, $\omega_{c}\tau \ll 1$, is calculated. We have shown that to leading order in $1/\epsilon_{F}\tau$ the Hall coefficient $R_{H}$ is not renormalized by the electron-electron…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…