Related papers: Geometrical-confinement effects on excitons in qua…
We theoretically study the effects of bias-controlled interdot tunneling in vertically coupled quantum dots on the emission properties of spin excitons in various bias-controlled tunneling regimes. As a main result, for strongly coupled…
We propose a new variety of silicon quantum dots containing fullerene-derived hollows of nearly arbitrary symmetry. Conglomerate structures are designed by connecting the quantum dots through two kinds of junctions. The quantum confinement…
The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence…
Because of their conveniently tunable optoelectronic properties, semiconductor nanocrystals have become established components for new devices and emergent technologies, in a broad range of applications which include agriculture, medicine,…
Quantum dots are semiconductor nano-structures where particle motion is confined in all three spatial dimensions. Since their first experimental realization, nanocrystals confining the quanta of polarization waves, termed excitons, have…
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and…
We derive a general relation between the fine structure splitting (FSS) and the exciton polarization angle of self-assembled quantum dots (QDs) under uniaxial stress. We show that the FSS lower bound under external stress can be predicted…
The paper aims to reveal the relationship between the geometrical features and linear and nonlinear optical properties of InAs quantum dots (QDs). This problem is justified by the extreme variety offered by the recent advances in growth…
In this work we study theoretically and experimentally the multi-particle structure of the so-called type-II quantum dots with spatially separated electrons and holes. Our calculations based on customarily developed full configuration…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
We discuss the properties of few electrons and electron-hole pairs confined in coupled semiconductor quantum dots, with emphasis on correlation effects and the role of tunneling. We shall discuss, in particular, exact diagonalization…
Absorption spectra of neutral, negatively and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p-shell transitions, including the influence of nearby…
The optical orientation and alignment of excitons in semiconductor indirect gap quantum dots have been studied theoretically. A special regime is analyzed in which the energy of the hyperfine interaction of an electron with lattice nuclei…
Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 nm and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of exciton motion in…
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence…
Electronic properties of graphene quantum dots (GQDs) constitute a subject of intense scientific interest. Being smaller than 20 nm, GQDs contain confined excitons in all dimensions simultaneously. GQDs feature a non-zero band gap and…
Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D…
A sequence of photoluminescence spectroscopy based methods are used to rigorously identify and study all the main spectral features (more than thirty emission lines) of site controlled InGaAs/AlGaAs quantum dots (QDs) grown along [111]B in…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic…