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Related papers: Magnetotransport with two occupied subbands in a S…

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We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a…

Strongly Correlated Electrons · Physics 2015-06-03 H. Takahashi , R. Okazaki , Y. Yasui , I. Terasaki

We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire ($R_{wire} \sim 30$\,k$\Omega$) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the…

Mesoscale and Nanoscale Physics · Physics 2013-09-17 A. A. Zhukov , Ch. Volk , A. Winden , H. Hardtdegen , Th. Schaepers

Recent theoretical results on transport in a two-dimensional disordered electron liquid with spin and isospin degrees of freedom are reviewed. A number of experimental features in temperature dependence of resistivity at low temperatures in…

Mesoscale and Nanoscale Physics · Physics 2016-12-06 I. S. Burmistrov

We show that the recent experimental claim [Pudalov {\it et al}. \prl {\bf 91}, 126403 (2003) ] of observing ``interaction effects in the conductivity of Si inversion layers at intermediate temperatures'' is incorrect and misleading. In…

Strongly Correlated Electrons · Physics 2009-11-10 S. Das Sarma , E. H. Hwang

We present here a simple qualitative model that interpolates between the high and low temperature properties of quasi-1D conductors. At high temperatures we argue that transport is governed by inelastic scattering whereas at low…

Disordered Systems and Neural Networks · Physics 2009-10-30 Ivar Martin , Philip Phillips

In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressure. Up to 40 kbar (= 4 GPa), the decrease of carrier…

Condensed Matter · Physics 2009-10-28 D. Errandonea , A. Segura , J. F. Sánchez-Royo , V. Muñoz , P. Grima , A. Chevy , C. Ulrich

Magneto-transport study has been performed in ZrTe5 single crystals. The observed Shubnikov-de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe5.…

Materials Science · Physics 2019-03-28 L. Zhou , A. Ramiere , P. B. Chen , J. Y. Tang , Y. H. Wu , X. Lei , G. P. Guo , J. Q. He , H. T. He

We study a system of spinless electrons moving in a two dimensional noncommutative space subject to a perpendicular magnetic field $\vec B$ and confined by a harmonic potential type ${1\over 2}mw_{0}r^2$. We look for the orbital magnetism…

High Energy Physics - Theory · Physics 2008-11-26 Ahmed Jellal

We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…

Materials Science · Physics 2009-11-13 M. Prunnila , S. J. Laakso , J. M. Kivioja , J. Ahopelto

The resistivity in the ferromagnetic state of flux-grown La_{2/3}(Pb,Ca)_{1/3}MnO_3 single crystals, measured in magnetic fields up to 7 T, reveals a strong quadratic temperature dependence at and above 50 K. At lower temperatures, this…

Strongly Correlated Electrons · Physics 2009-10-30 M. Jaime , P. Lin , M. B Salamon , P. Han

Transition metal dichalcogenides have received much attention in the past decade not only due to the new fundamental physics, but also due to the emergent applications in these materials. Currently chalcogenide deficiencies in TMDs are…

We study the quasiclassical magnetotransport of non-interacting fermions in two dimensions moving in a random array of strong scatterers (antidots, impurities or defects) on the background of a smooth random potential. We demonstrate that…

Disordered Systems and Neural Networks · Physics 2009-11-07 A. D. Mirlin , D. G. Polyakov , F. Evers , P. Woelfle

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site…

Strongly Correlated Electrons · Physics 2007-05-23 Y. Ono , K. Sano

We investigate the magnetotransport properties of the one-band Hubbard-Holstein model at half-filling in three dimensions (3D) using exact diagonalization based semi-classical Monte Carlo simulations with phonons treated in the adiabatic…

Strongly Correlated Electrons · Physics 2026-04-21 Sandip Halder , Moshe Schechter

MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…

Materials Science · Physics 2016-06-13 Xiao Shen , Sarit Dhar , Sokrates T. Pantelides

The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the {\it b} axis. The resistivity at zero field exhibits quadratic temperature dependence…

Strongly Correlated Electrons · Physics 2009-11-07 T. Terashima , C. Terakura , S. Uji , H. Aoki , Y. Echizen , T. Takabatake

We derive the low temperature properties of the molecular magnet Mo72Fe30, where 30 Fe(3+) paramagnetic ions occupy the sites of an icosidodecahedron and interact via isotropic nearest-neighbour antiferromagnetic Heisenberg exchange. The…

Materials Science · Physics 2009-11-07 J. Schnack , M. Luban , R. Modler

The beating pattern of Shubnikov-de Haas oscillations is reproduced in both the crossed and tilted magnetic field configuration and in presence of zero-field valley splitting in Si-MOSFET system. The consequences of IQHE in extremely dilute…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 M. V. Cheremisin

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples…

Mesoscale and Nanoscale Physics · Physics 2015-05-28 Dmitri K. Efetov , Patrick Maher , Simas Glinskis , Philip Kim

A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer…

Mesoscale and Nanoscale Physics · Physics 2022-08-22 Xiaobo Li , Haitian Su , H. Q. Xu