Related papers: Excitons in type-II quantum dots: Finite offsets
Combining magnetometry with optical spectroscopy has uncovered novel quantum phenomena and is emerging as a platform for quantum information science. Yet, the theory of magnetic response of excitons, correlated electron-hole pairs in…
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV…
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined.…
The mechanical effects in finite two-dimensional electron systems (quantum dots or droplets) in a strong perpendicular magnetic field are studied. It is shown that, due to asymmetry of the cyclotron dynamics, an additional in-plane electric…
Excitons, Coulomb-bound electron-hole pairs, are the fundamental excitations governing the optoelectronic properties of semiconductors. While optical signatures of excitons have been studied extensively, experimental access to the excitonic…
A theory of non-linear emission of quantum dot ensembles coupled to the optical mode of the microcavity is presented. Numerical results are compared with analytical approaches. The effects of exciton-exciton interaction within the quantum…
The effects resulting due to dressing of an exciton with phonons are analysed as the source of unavoidable decoherence of orbital degrees of freedom in quantum dots. The dressing with longitudinal optical phonons results in energetic shift…
The effects of the electron-phonon interaction on optical excitations can be understood in terms of exciton-phonon coupling, and require a careful treatment in low-dimensional materials with strongly bound excitons or strong electron-hole…
For small organic conjugated molecules the exciton binding energy can be calculated treating molecules as conductor, and is given by a simple relation BE \approx e2/(4{\pi}{\epsilon}0{\epsilon}R), where {\epsilon} is the dielectric constant…
This theoretical paper offers an explicit expression for the binding energy of excitons in a two-dimensional semiconductor with a flat valence band. The formula has been derived quasiclassically assuming that the exciton is tightly bound;…
Excitonic effects due to the correlation of electrons and holes in excited states of matter dominate the optical spectra of many interesting materials. They are usually studied in the long-wavelength limit. Here we investigate excitons at…
Transition energies and oscillator strengths of excitons in dependence on magnetic field are investigated in type I and II semiconductor nanorings. A slight deviation from circular (concentric) shape of the type II nanoring gives a better…
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a…
We present a model-independent and relativistic approach to analytically derive electromagnetic finite-size effects beyond the point-like approximation. The key element is the use of electromagnetic Ward identities to constrain vertex…
The spin-flip rate that couples dark and bright excitons in self-assembled quantum dots is obtained from time-resolved spontaneous emission measurements in a modified local density of optical states. Employing this technique, we can…
A microscopic model of a heterostructure with a quantum well (QW) is proposed to study the exciton behavior in an external electric field. The effect of an electric field ranging from 0 to 6 kV/cm applied to the GaAs/AlGaAs QW structure in…
As the bound state of two oppositely charged particles, excitons emerge from optically excited semiconductors as the electronic analogue of a hydrogen atom. In the two-dimensional (2D) case, realized either in quantum well systems or truly…
The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear…
Using the tight-binding approach, we investigate the energy spectrum of square, triangular and hexagonal MoS$_2$ quantum dots (QDs) in the presence of a perpendicular magnetic field. Novel edge states emerge in MoS$_2$ QDs, which are…
The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum…