Related papers: Landau Level Gap Reduction at Abrupt Edges
Exact diagonalization of a two-dimensional electron gas in a strong magnetic field in the disk geometry shows that there exists a filling factor range in the second Landau level where the states significantly differ from those in the lowest…
For an interacting system of N electrons, we study the conditions under which a lattice model of size L with nearest neighbor hopping t and U/r Coulomb repulsion has the same ground state as a continuum model. For a fixed value of N, one…
We compute the effect of Landau-level-mixing on the effective two-body and three-body pseudopotentials for electrons in the lowest and second Landau levels. We find that the resulting effective three-body interaction is attractive in the…
We find that a repulsive potential of graphene in the presence of a magnetic field has bound states that are peaked inside the barrier with tails extending over \ell(N + 1), where \ell and N are the magnetic length and Landau level(LL)…
A random-phase approximation (RPA) treatment of edge magnetoplasmons (EMP) is presented for strong magnetic fields, low temperatures, and integer filling factors \nu. It is valid for negligible dissipation and lateral confining potentials…
Using electroweak data and an effective Lagrangian approach we obtain stringent bounds on the tau anomalous magnetic moment, $-0.004 \leq a_\tau \leq 0.006$, and on its electric dipole moment, $|d_\tau| \leq 1.1 \times 10^{-17} e$ cm. This…
The interplay between a magnetic field and the Coulomb potential from a charged vacancy on the electron states in graphene is investigated within the tight-binding model. The Coulomb potential removes locally Landau level degeneracy, while…
It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is…
Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe$_2$ sheet dramatically impacts the energies…
The purpose of this paper is to formulate a kinetic theory describing transport properties of electrons in a uniform magnetic field of arbitrary magnitude. Exposing an electronic system to a constant magnetic field quenches its energy bands…
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance.…
We describe an experimental technique to measure the chemical potential, $\mu$, in atomically thin layered materials with high sensitivity and in the static limit. We apply the technique to a high quality graphene monolayer to map out the…
Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer…
We present a simple method that allows to calculate the electromagnetic response of non-interacting electrons in strong magnetic field to arbitrary order in the gradients of external electric and magnetic fields. We illustrate the method on…
We develop a simple model of surface states for topological insulators, developing matching relations for states on surfaces of different orientations. The model allows one to write simple Dirac Hamiltonians for each surface, and to…
Electronic structure of graphene monolayer-bilayer junction in a magnetic field is studied within an effective-mass approximation. The energy spectrum is characterized by interface Landau levels, i.e., the locally flat bands appearing near…
In a two-subband GaAs/AlGaAs two-dimensional electron system, the phase diagram of longitudinal resistivity \rho_xx in density and magnetic field plane exhibits an intriguing structure centered at filling factor \nu = 4 which is strikingly…
We study the ground state of a clean two-dimensional electron liquid in a weak magnetic field where $N \gg 1$ lower Landau levels are completely filled and the upper level is partially filled. It is shown that the electrons at the upper…
Low-temperature, electronic transport in Landau levels N>1 of a two-dimensional electron system is strongly anisotropic. At half-filling of either spin level of each such Landau level the magnetoresistance either collapses to form a deep…
We have investigated the influence of an increasing in-plane magnetic field on the states at half-filling of Landau levels ($\nu$ = 11/2, 9/2, 7/2, and 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at…