Related papers: Electron-Electron Interactions and the Hall-Insula…
We analyze the dissipative conductance of the zero-plateau quantum Hall state appearing in undoped graphene in strong magnetic fields. Charge transport in this state is assumed to be carried by a magnetic domain wall, which forms by…
We derive a Kubo-like formula for the thermal Hall conductance of a 2d lattice systems which is free from ambiguities associated with the definition of energy magnetization. We use it to define a relative topological invariant of gapped 2d…
We show that in models with the Hatsugai-Kohmoto type of interaction that is local in momentum space thus infinite-range in real space, Kubo formulas neither reproduce the correct thermodynamic susceptibilities, nor yield sensible transport…
We consider a non-interacting electron gas confined to a two-dimensional crystal by the action of a perpendicular magnetic field; in the one-particle approximation, the dynamics of the system is modelled by a spectrally gapped Bloch-Landau…
We derive an exact expression for the orbital magnetization of electrons with short-range interactions (such as density-density interactions) in terms of exact zero-frequency response functions of the zero-field system. The result applies…
We consider a system of two-dimensional electrons strongly localized by disorder. Interactions create a gap in the average tunneling density of states $\nu(E)$ at energies, E, close to the Fermi level. We derive a system of self-consistent…
We consider an infinitely extended system of fermions on a $d$-dimensional lattice with (magnetic) translation-invariant short-range interactions. We further assume that the system has a locally unique gapped ground state. Physically, this…
When time-reversal symmetry is weakly broken and interactions are neglected, the surface of a $Z_{2}$ topological insulator supports a half-quantized Hall conductivity $\sigma_{S} = e^{2}/(2h)$. A surface Hall conductivity in an insulator…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
This pedagogical piece provides a surprisingly simple demonstration that the quantized Hall conductivity of correlated insulators is given by the many-body Chern number, a topological invariant defined in the space of twisted boundary…
Materials subjected to a magnetic field exhibit the Hall effect, a phenomenon studied and understood in fine detail. Here we report a qualitative breach of this classical behavior in electron systems with high viscosity. The viscous fluid…
Starting from the Kubo formula, we expand the Hall conductivity using a cumulant approach which converges quickly at high temperatures (k_BT > energy differences of initial and final scattering states) and can be extended to low…
By considering N_e-electrons and N_h-holes together in uniform external magnetic and electric fields, we end up with a total Hall conductivity \sigma_{H}^{tot}, which is depending to the difference between N_e and N_h and becomes null when…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…
We study the influence of short-range electron-electron interactions on scaling behavior near the integer quantum Hall plateau transitions. Short-range interactions are known to be irrelevant at the renormalization group fixed point which…
We analyze the effect that the Coulomb interaction has on the edge excitations of an electron gas confined in a bar of thickness $W$, and in presence of a magnetic field corresponding to filling factor 1 Quantum Hall effect. We find that…
Non-commutative analysis tools have successfully been applied to the integer quantum Hall effect, in particular for a proof of the stability of the Hall conductance in an Anderson localization regime and of the bulk-boundary correspondence.…
We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo…
In this paper I give a detailed account of an ab initio methodology for describing strong electronic correlations in nanoscale devices hosting transition metal atoms with open $d$- or $f$-shells. The method combines Kohn-Sham Density…
In a recent paper by Neupert, Santos, Chamon, and Mudry [Phys. Rev. B 86, 165133 (2012)] it is claimed that there is an elementary formula for the Hall conductivity of fractional Chern insulators. We show that the proposed formula cannot…