Related papers: Suppression of tunneling by interference in half-i…
Quantum tunneling between two potential wells in a magnetic field can be strongly increased when the potential barrier varies in the direction perpendicular to the line connecting the two wells and remains constant along this line. An…
The electron tunneling in half metallic manganite tunnel junctions is studied by using a quantum mechanically treated double exchange model. We show that the stimulation of spin excitations, caused by the strong Hund's coupling between the…
Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…
The current-voltage characteristic of a one dimensional quantum dot connected via tunnel barriers to interacting leads is calculated in the region of sequential tunneling. The spin of the electrons is taken into account. Non-Fermi liquid…
Quantum tunneling is a fundamental quantum mechanical effect involved in plenty of physical phenomena. Its control would impact these phenomena and the technologies based on them. We show that the quantum tunneling probability through a…
We present an exact, analytic solution of the spin dependent quantum transport problem with spin-orbit interaction in a one-dimensional mesoscopic ring with one input and two output leads. We demonstrate that for appropriate parameters…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…
SHORTENED ABSTRACT: A system exhibiting multiple simultaneously broken symmetries offers the opportunity to influence physical phenomena such as tunneling currents by means of external control parameters. In this paper, we consider the…
We derive exact sum-rules that relate the tunneling density of states (TDOS) of spinful electrons in the fractional quantum Hall (FQH) regime to the spin-dependent many body ground state correlation energy. Because the tunneling process is…
The spin-reversal in dilute Li$_2$(Li$_{1-x}$Fe$_{x}$)N with $x < 1$ % is dominated by resonant quantum tunneling of spatially well-separated states. We report on the effect of finite couplings between those states that give rise to…
A magnet with precessing magnetization pumps a spin current into adjacent leads. As a special case of this spin pumping, a precessing macrospin (magnetization) can assist electrons in tunneling. In small systems, however, the Coulomb…
We study the quantum tunnel effect through a potential barrier employing a semiclassical formulation of quantum mechanics based on expectation values of configuration variables and quantum dispersions as dynamical variables. The evolution…
Spin is commonly thought to reflect the true quantum nature of microphysics. We show that spin is related to intrinsic and field-like properties of single particles. These properties change continuously in external magnetic fields.…
Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N) conductor is presented. We show that tunnel contacts (T) can dramatically increase spin injection and solve the problem of the mismatch in the…
Motivated by the experimental observations of resonant tunnelings in the systems with half-integer spin, such as V$_{15}$ and Mn$_4$, we study the mechanism of adiabatic change of the magnetization in systems with the time-reversal…
The level splitting formulae much discussed in the study of spin tunneling in macroscopic ferromagnetic particles and previously derived only by complicated pseudoparticle methods for the ground state, are derived from those of eigenvalues…
We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
Electron tunneling through a system formed by two coupled quantum dots in a parallel geometry is considered within a generalized Anderson model. The dots are assumed to have nearly equal radii but different (and tunable) gate voltages. In…