Related papers: Weak localisation in bilayer graphene
Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both…
We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the…
It was recently shown that a finite imbalance between electron densities in the $\mathbf{K}$ and $\mathbf{K}'$ valleys of bilayer graphene induces a magnetoelectric coupling. Here we explore ramifications of this electronically tunable…
We calculate the weak localization correction in the double crossover to broken time-reversal and spin-rotational symmetry for a disordered microbridge or a short disordered wire using a scattering-matrix approach. Whereas the correction…
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not…
We study the localization properties of two-dimensional electrons in a weak perpendicular magnetic field. For this purpose we construct weakly chiral network models on the square and triangular lattices, by separating in space the regions…
We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing…
A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in…
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the…
Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenides (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers,…
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative…
At low temperatures, quantum corrections, originating from the interference of the many paths an electron may take between two points, tend to dominate the transport properties of two-dimensional conductors. These quantum corrections…
We carry out an explicit calculation of the vacuum polarization tensor for an effective low-energy model of monolayer graphene in the presence of a weak magnetic field of intensity $B$ perpendicularly aligned to the membrane. By expanding…
We report a theoretical low-field magnetotransport study unveiling the effect of pseudospin in realistic models of weakly disordered graphene-based materials. Using an efficient Kubo computational method, and simulating the effect of…
The Josephson effect is one of the most studied macroscopic quantum phenomena in condensed matter physics and has been an essential part of the quantum technologies development over the last decades. It is already used in many applications…
We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree-Fock calculation. We show that with realistic values of the parameters and for experimentally…
We study the strong localization of hard core bosons. Using a locator expansion we find that in the insulator, unlike for typical fermion problems, nearly all low-energy scattering paths come with positive amplitudes and hence interfere…
We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the…
We study the localization properties of electrons in incommensurate twisted bilayer graphene for small angles, encompassing the narrow-band regime, by numerically exact means. Sub-ballistic states are found within the narrow-band region…
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to…