Related papers: Semiconductors between spin-polarized source and d…
A theory of spin polarized tunneling spectroscopy based on a scattering theory is given for tunneling junctions between ferromagnets and d-wave superconductors. The spin filtering effect of an exchange field in the insulator is also…
Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle…
Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron…
We theoretically study nonequilibrium spin transport in a superconducting wire connected by tunnel junctions to two ferromagnetic metal wires, each of which serves as an injector or detector of spin-polarized electron current. We present a…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
Quantum interference effects in rings provide suitable means for controlling spin at mesoscopic scales. Here we apply such a control mechanism to the spin-dependent transport in a ballistic quasi one dimensional ring patterned in two…
We propose a scheme where transport measurements of charge current and its noise can be used to determine the spin Hall conductance in a four-terminal setup. Starting from the scattering formalism we express the spin current and spin Hall…
We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$…
We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling…
A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
In systems with strong spin-orbit coupling, the relationship between spin-transfer torque and the divergence of the spin current is generalized to a relation between spin transfer torques, total angular momentum current, and mechanical…
We investigate theoretically the prospects for using a magnetic nanoelectromechanical single-electron tunneling (NEM-SET) device as an electronic spin filter. We find that strong magnetic exchange forces on the net spin of the mobile…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…
We present a theory of magnetotransport through an electronic orbital, where the electron spin interacts with a (sufficiently) large external spin via an exchange interaction. Using a semiclassical approximation, we derive a set of…