Related papers: Plasma-Like Negative Capacitance in Nano-Colloids
Plasma effect is observed in CCDs exposed to heavy ionizing alpha-particles with energies in the range 0.5 - 5.5 MeV. The results obtained for the size of the charge clusters reconstructed on the CCD pixels agrees with previous measurements…
We report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. We account quantitatively for this phenomenon by the recombination current due to…
Particle-in-cell/Monte Carlo technique is used to simulate low pressure electro-negative and electro-positive plasmas at a frequency of 10 MHz. The potential, electric field, electron and ion density, and currents flowing across the plasma…
The conditions for the excitation of current and voltage oscillations in the plasma of a three-electrode current and voltage stabilizer are experimentally investigated. It was found that in the regimes under consideration, the plasma has…
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored…
The transient negative capacitance (NC) of solid ferroelectric materials used in field effect transistors can reduce the power dissipation of electronics. Here we show that similar negative capacitance appears in the recently discovered…
The so-called negative electron compressibility refers to the lowering of the chemical potential of a metallic system when the carrier density increases. This effect has often been invoked in the past to explain the enhancement of the…
Compact plasmas, that exist near black-hole candidates and in gamma ray burst sources, commonly exhibit self-organized non-linear behavior. A model that simulates the non-linear behavior of compact radiative plasmas is constructed directly…
The significance of a negative dielectric constant has long been recognized. We report here the observation of a field-induced large negative dielectric constant of aggregates of oxide nano-particles at frequencies below ~ 1 Hz at room…
It has been increasingly becoming clear that Casimir and Casimir-Polder entropies may be negative in certain regions of temperature and separation. In fact, the occurrence of negative entropy seems to be a nearly ubiquitous phenomenon. This…
We report the observation of plasma oscillations in an ultracold neutral plasma. With this collective mode we probe the electron density distribution and study the expansion of the plasma as a function of time. For classical plasma…
Nano-junctions, containing atomic-scale gold contacts between strongly disordered leads, exhibit different transport properties at room temperature and at low temperature. At room temperature, the nano-junctions exhibit conductance…
Various models leading to predictions of negative capacitance, C, are briefly reviewed. Their relation to the nature of electric control is discussed. We reconfirm that the calculated double layer capacitance can be negative under S-control…
We discuss negative damping regimes in quantum nano-electromechanical systems formed by coupling a mechanical oscillator to a single-electron transistor (normal or superconducting). Using an analogy to a laser with a tunable atom-field…
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…
It is shown that negative heat capacity in nanoclusters is an artifact of applying equilibrium thermodynamic formalism on a small system trapped out of equilibrium in a particular structural motif representing only part of the energetically…
We analyze the nonlinear voltage dependence of elelctrochemical capacitance for nano-scale conductors. This voltage dependence is due to finite density of states of the conductors. We derive an exact expression for the electrochemical…
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change…
The nonlinear capacitance in doped nanotube junctions is calculated self consistently. It decreases as a function of the applied bias when the latter becomes larger than the pseudogap of the nanotube. For this device, one can deduce a…
The idea of isotropic resonant magnetism in the visible range of frequencies known from precedent publications is developed having in mind achievements of the modern chemistry. Plasmonic colloidal nanoparticles covering a silica core form a…