Related papers: Valley Kondo Effect in Silicon Quantum Dots
We present a theoretical study of low temperature nonequilibrium transport through an interacting quantum dot in the presence of Zeeman magnetic field and current injection into one of its leads. By using a self-consistent renormalized…
The system described in this work consists of a quantum dot inserted in a mesoscopic ring threaded by a magnetic flux. Our aim is to present a complete description for this device and to predict the physics of a experiment with these…
Mesoscopic systems constitute appealing platforms to study many-body physics with light and matter degrees of freedom. The Kondo effect refers to the screening of a spin-1/2 impurity by a cloud of conduction electrons, then forming a…
It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional electron systems can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
We study the Kondo effect in a quantum dot embedded in a mesoscopic ring taking into account intradot spin-flip scattering $R$. Based on the finite-$U$ slave-boson mean-field approach, we find that the Kondo peak in the density of states is…
In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $\nu$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to…
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…
We investigate the dependence of the ground state of a multi-level quantum dot on the coupling to an external fermionic system and on the interactions in the dot. As the coupling to the external system increases, the rearrangement of the…
Single-particle spectrum of the Kondo lattice model is derived with use of the continuous-time quantum Monte Carlo method, combined with the dynamical mean-field theory. Crossover behavior is traced quantitatively either to a heavy…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
A theory of the Kondo effect in quantum dots at zero temperature in the presence of arbitrary intense AC potentials is presented.We generalize the Friedel-Langreth sum rule to take care of charge conservation and propose a consistent…
Numerical calculations simulate transport experiments in carbon nanotube quantum dots (P. Jarillo-Herrero et al., Nature 434, 484 (2005)), where a strongly enhanced Kondo temperature T_K ~ 8K was associated with the SU(4) symmetry of the…
This is a three step work: i) we explain why quantum point contacts are similar to ballistic quantum dots; ii) we introduce the virtual Kondo state in both systems; iii-1st) this state explains 0.7 structure in point contacts; iii-2nd)…
Electron tunneling through a double quantum dot molecule, in the Kondo regime, under the effect of a magnetic field and an applied voltage, is studied. This system possesses a complex response to the applied fields characterized by a…
We investigate a system of three tunnel-coupled semiconductor quantum dots in a triangular geometry, one of which is connected to a metallic lead, in the regime where each dot is essentially singly occupied. Both ferro- and…
The Kondo effect and the Fano-Kondo effect are important phenomena that have been observed in quantum dots (QDs). We theoretically investigate the transport properties of a coupled QD system in order to study the possibility of detecting a…
The valley splitting of 2D electrons in doubly-gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO$_{2}$ interface, the valley splitting…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
We consider electron transport along a single-mode channel which is in contact, via tunnel junctions in its walls, with two quantum dots. Electron tunneling to and from the dots contributes to the electron backscattering, and thus modifies…