Related papers: Kondo and Dicke effect in quantum-dots side couple…
Orbital Kondo effect in a system of two single-level quantum dots attached to external electron reservoirs is considered theoretically. The dots are coupled via direct hoping term and Coulomb interaction. The Kondo temperature is evaluated…
We analyze the full counting statistics (FCS) of quantum dots in the Kondo regime contacted by normal and superconducting leads or an STM tip. To describe the Kondo resonance we use an effective model for the quantum dot in the Kondo regime…
The time-dependent non-crossing approximation is employed for the single-electron transistor to calculate the transient response of the conductance for a variety of temperatures and biases. We consider the case when the dot-lead tunneling…
We study the Kondo effect in a quantum dot which is coupled to ferromagnetic leads and analyse its properties as a function of the spin polarization of the leads. Based on a scaling approach we predict that for parallel alignment of the…
Strong electron correlations and interference effects are discussed in parallel-coupled single-level and orbitally doubly degenerate quantum dots. The finite-U mean-field slave boson approach is used to study many-body effects. The analysis…
We investigate theoretically the linear conductance of a two-level quantum dot as a function of the gate voltage and different strength of coupling to the external electronic system (the reservoir). Apart from the weak coupling regime,…
We examine the properties of a dc-biased quantum dot in the Coulomb blockade regime. For voltages V large compared to the Kondo temperature T_K, the physics is governed by the scales V and gamma, where gamma ~ V/ln^2(V/T_K) is the…
We study the interplay between Coulomb blockade and the Kondo effect in quantum dots. We use a self-consistent scheme which describes mesoscopic devices in terms of a collective phase variable (slave rotor) and quasiparticle degrees of…
The quantum interference effect among coupled identical quantum dots is studied in the present paper in the limit of strong intra-dot Coulomb interaction. When the average electron number in each dot is a fraction of an integer, quantum…
We study the Kondo effect in a quantum dot coupled to two noncollinear ferromagnetic leads. First, we study the spin splitting $\delta\epsilon=\epsilon_{\downarrow}-\epsilon_{\uparrow}$ of an energy level in the quantum dot by tunnel…
We consider a `quantum dot' in the Coulomb blockade regime, subject to an arbitrarily large source-drain voltage V. When V is small, quantum dots with odd electron occupation display the Kondo effect, giving rise to enhanced conductance.…
We theoretically investigate the Kondo effect of a T-shaped triple-quantum-dot structure, by means of the numerical renormalization group method. It is found that at the point of electron-hole symmetry, the system's entropy has…
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…
We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose…
We present a {\it nonequilibrium nonperturbative} field theory for the Kondo effect in strongly interacting quantum dots at finite temperatures. Unifying the slave-boson representation with the Keldysh field integral an effective Keldysh…
Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At…
We show how the charge input signal applied to the gate electrode in a double and triple quantum dot may be converted to a pulse in the Kondo cotunneling current being a spin response of a nano-device under a strong Coulomb blockade. The…
The Kondo problem, for a quantum dot (QD), subjected to an external bias, is analyzed in the limit of infinite Coulomb repulsion by using a consistent equations of motion method based on a slave-boson Hamiltonian. Utilizing a strict…
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…
We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the…