Related papers: Imaging Electrical Conduction through InAs Nanowir…

We present a scanning probe microscopy technique for spatially resolving transport in cold atomic gases, in close analogy with scanning gate microscopy in semiconductor physics. The conductance of a quantum point contact connected to two…

We theoretically study scanning gate microscopy (SGM) of electron and hole trajectories in a quantum point contact (QPC) embedded in a normal-superconductor (NS) junction. At zero voltage bias, the electrons and holes transported through…

We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies…

Images of electron flow through a two-dimensional electron gas from a quantum point contact (QPC) can be obtained at liquid He temperatures using scanning probe microscopy (SPM). A negatively charged SPM tip depletes the electron gas…

Scanning probe microscopy (SPM) is traditionally based on very sharp tips, where the small size of the apex is critical for resolution. This paradigm is about to shift, since a novel generation of planar probes (color centers in diamond,…

Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…

We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position…

Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the…

Data are presented on inductance of various features used in superconductor digital integrated circuits such as microstrip and stripline inductors with linewidths down to 120 nm and different combinations of ground plane layers, effect of…

We demonstrate the procedure of Scanning Probe Microscopy (SPM) conductive probe fabrication with a single multi-walled carbon nanotube (MWNT) on a silicon cantilever pyramid. The nanotube bundle reliably attached to the metal-covered…

A multiple-tip ultra-high vacuum (UHV) scanning tunneling microscope (MT-STM) with a scanning electron microscope (SEM) for imaging and molecular-beam epitaxy growth capabilities has been developed. This instrument (nanoworkbench) is used…

Scanning superconducting quantum interference device (SQUID) microscopy is a magnetic imaging technique combining high-field sensitivity with nanometer-scale spatial resolution. State-of-the-art SQUID-on-tip probes are now playing an…

Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications.…

We study the conductance of an electron interferometer formed in a two dimensional electron gas between a nanostructured quantum contact and the charged tip of a scanning gate microscope. Measuring the conductance as a function of the tip…

We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned…

We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip…

A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs…

We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of…

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a…

We propose cotunneling as the microscopic mechanism that makes possible inelastic electron spectroscopy of magnetic atoms in surfaces for a wide range of systems, including single magnetic adatoms, molecules and molecular stacks. We…