Related papers: Multi-excitonic complexes in single InGaN quantum …
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
An approach is proposed to determine parameters of homogeneous and inhomogeneous broadening for reflection lines of quasi-two-dimensional excitons in semiconductor quantum well structures. A phenomenological model is developed taking into…
The exciton lifetimes $T_1$ in arrays of InAs/GaAs vertically coupled quantum dot pairs have been measured by time-resolved photoluminescence. A considerable reduction of $T_1$ by up to a factor of $\sim$ 2 has been observed as compared to…
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of…
A detailed understanding of the population and coherence dynamics in optically driven individual emitters in solids and their signatures in ultrafast nonlinear-optical signals is of prime importance for their applications in future quantum…
Semiconductor quantum dots host a rich manifold of excitonic complexes, including neutral excitons that emit anti-bunched single photons and charged exciton complexes capable of producing super-bunched photons via cascade emission.…
A multi-high-frequency electron paramagnetic resonance method is used to probe the magnetic excitations of a dimer of single-molecule magnets. The measured spectra display well resolved quantum transitions involving coherent superposition…
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…
The photoluminescence dynamics of a microscopic gas of indirect excitons trapped in coupled quantum wells is probed at very low bath temperature (approximately 350 mK). Our experiments reveal the non linear energy relaxation characteristics…
Spatially structured light fields applied to semiconductor quantum dots yield fundamentally different absorption spectra than homogeneous beams. In this paper, we theoretically discuss the resulting spectra for different light beams using a…
InAs self-assembled quantum dots were grown on strained layers of GaxIn1-xP (0 < x < 0.3) on InP substrates. We show that the quantum dots have narrow vertical dimensions, ranging between 2 to 10 monolayers only. The dot layer…
Dielectric screening is greatly important to an accurate calculation of the exciton binding energies in two-dimensional materials. In this work, we calculate the dielectric function and 2D polarizability of multilayer (up to three)…
We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength…
We theoretically study the polarization entanglement of photons generated by the biexciton cascade in a GaAs/InAs semiconductor quantum dot (QD), located in a nano cavity. A detailed analysis of the complex interplay between photon- and…
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode…
Indirect excitons in coupled quantum wells have long radiative lifetimes and form a cold quasi-two-dimensional population suitable for studying collective quantum effects. Here we report the observation of the exciton Mott transition from…
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly…
We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…
This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two…
We study the localization of dressed Dirac electrons in a cylindrical quantum dot (QD) formed on monolayer and bilayer graphene by spatially different potential profiles. Short lived excitonic states which are too broad to be resolved in…