Related papers: Electrical spin injection into p-doped quantum dot…
For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system.…
Electroluminescence in organic semiconductors strongly depends on the relative population of excited singlet and triplet excitonic states resulting from recombination of injected carriers. In conventional organic light-emitting diodes…
It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and…
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able…
A normally incident light of linear polarization injects a pure spin current in a strip of 2-dimensional electron gas with spin-orbit coupling. We report observation of an electric current with a butterfly-like pattern induced by such a…
We report nearly complete preservation of "spin memory" between optical absorption and photoluminescence (PL) in nanometer slabs of GaSe pumped with up to 0.2 eV excess energy. At cryogenic temperatures, the initial degree of circular…
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…
We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1%…
We present theoretical aspects of spin polarized two dimensional electron gas (SP2DEG) which can be achieved in doped semimagnetic quantum wells. This original model system has been recently studied by magneto Raman scattering experiments…
We study a system in which electrons in a two-dimensional electron gas are confined by a nonhomogeneous nuclear spin polarization. The system consists of a heterostructure that has non-zero nuclei spins. We show that in this system…
In mesoscopic systems with spin-orbit coupling, spin-injection into quantum dots at zero magnetic field is expected under a wide range of conditions. However, up to now, a viable approach for experimentally identifying such injection has…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
We study the polarization properties of light emitted by quantum dots that are embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral…
We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin…
We propose a concept of quantum dot based light emitting diode that produces circularly polarized light due to the tuning of the exciton fine structure by magnetic field and electron nuclear hyperfine interaction. The device operates under…
We have realised a semiconductor quantum structure that produces electroluminescence while operating in the light-matter strong coupling regime. The mid-infrared light emitting device is composed of a quantum cascade structure embedded in a…
Irradiating a semiconductor with circularly polarized light creates spin-polarized charge carriers. If the material contains atoms with non-zero nuclear spin, they interact with the electron spins via the hyperfine coupling. Here, we…
We use a fully relativistic layer Green's functions approach to investigate spin-dependent tunneling through a symmetric indirect band gap barrier like GaAs/AlAs/GaAs heterostructure along [100] direction. The method is based on Linear…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
The backscattering process of injected electrons on exchange-splitted levels of quantum well (QW) in ferromagnetic metal / insulator / semiconductor heterostructure is studied. It is found that, if one of the exchange-splitted levels lies…