Related papers: Efficient switching of Rashba spin splitting in wi…
Electron spin dynamics is investigated in n-i-n GaAs/AlGaAs coupled quantum wells. The electron spin dephasing time is measured as a function of an external electrical bias under resonant excitation of the 1sHH intrawell exciton using a…
Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation micro-spectroscopy, supported by qualitative kinetic theory simulations of spin…
Spin splittings in III-V materials and heterostructures are of interest because of potential applications, mainly in spintronic devices. A necessary condition for the existence of these spin splittings is the absence of inversion symmetry.…
The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba…
Aiming at the optimization of the spin diffusion length in (001) GaAs quantum wells, we explore the effect of the anisotropy of the spin-orbit coupling on the competition between the Rashba and the Dresselhaus spin-orbit couplings by…
The spin-orbit interaction of 2D electrons in the quantum wells grown from the III-V semiconductors consists of the two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the…
The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating…
In a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit couplings, there are two spin-split energy surfaces connected with a degenerate point. Both the energy surfaces and the topology of the Fermi surfaces can be varied by…
Anomalous spin Hall effects that belong to the intrinsic type in Dresselhaus (110) quantum wells are discussed. For the out-of-plane spin component, antisymmetric current-induced spin polarization induces opposite spin Hall accumulation,…
We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the…
We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of…
Electron spin precession in nonuniform Rashba-Dresselhaus two-dimensional electron systems along arbitrary continuous paths is investigated. We derive an analytical formula to describe the spin vectors (expectation values of the injected…
We study the spin Hall effect of a two-dimensional electron gas in the presence of a magnetic field and both the Rashba and Dresselhaus spin-orbit interactions. We show that the value of the spin Hall conductivity, which is finite only if…
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…
In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal…
In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin orbit coupling is equivalent to an effective magnetic field B_so which has the opposite sign for s_z=1/2 spin electrons. When the external magnetic…
We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe$_2$/MoSe$_2$ with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset $k_0$=0.23 \AA$^{-1}$…
To induce a strong Rashba effective magnetic field and enhance its sensitivity to an external electric field, we propose acceptor doping in quantum wells. The acceptors are doped at the center of the well, and donors are doped in the…
The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum…
In two-dimensional (2D) hole systems the inversion asymmetry induced spin splitting differs remarkably from its familiar counterpart in the conduction band. While the so-called Rashba spin splitting of electron states increases linearly…