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Related papers: Resistive hystersis effects in perovskite oxide-ba…

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Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with…

Materials Science · Physics 2021-07-09 T. C. van Thiel , J. Fowlie , C. Autieri , N. Manca , M. Šiškins , D. Afanasiev , S. Gariglio , A. D. Caviglia

We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…

Applied Physics · Physics 2022-12-09 M. Abbasi Eskandari , S. Ghotb , P. Fournier

We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of…

We investigated current-voltage characteristics of unshunted and externally shunted Josephson junctions (JJs) with high critical current densities, Jc, in order to extract their basic parameters and statistical characteristics for JJ…

The radio frequency (RF) response of La1-xSrxMnO3 single crystals reveal a variety of features associated with the structural, electronic and magnetic properties of the system. The resonance technique operating at ~ 4 MHz employed in this…

Condensed Matter · Physics 2007-05-23 H. Srikanth , B. Revcolevschi , S. Sridhar , L. Pinsard , A. Revcolevschi

Josephson tunnel junctions with the strong ferromagnetic alloy $\Fe_{0.75}\Co_{0.25}$ as the barrier material were studied. The junctions were prepared with high quality down to a thickness range of a few monolayers of Fe-Co. An oscillation…

Superconductivity · Physics 2009-05-07 D. Sprungmann , K. Westerholt , H. Zabel , M. Weides , H. Kohlstedt

Electronic structure of a newly discovered antiperovskite superconductor MgCNi$_3$ is investigated by using the LMTO band method. The main contribution to the density of states (DOS) at the Fermi energy $E_{\rm F}$ comes from Ni 3$d$ states…

Superconductivity · Physics 2007-05-23 J. H. Shim , S. K. Kwon , B. I. Min

Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was…

Superconductivity · Physics 2007-05-23 M. Weides , C. Schindler , H. Kohlstedt

Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging.…

Strongly Correlated Electrons · Physics 2023-10-13 Allen Jian Yang , Liang Wu , Yanran Liu , Xinyu Zhang , Kun Han , Ying Huang , Shengyao Li , Xian Jun Loh , Qiang Zhu , Rui Su , Ce-Wen Nan , X. Renshaw Wang

A topological superconductor features at its boundaries and vortices Majorana fermions, which are potentially applicable for topological quantum computations. The scarcity of the known experimentally verified physical systems with…

Superconductivity · Physics 2020-03-18 Minseong Lee , Hyun-Jae Lee , Jun Hee Lee , Suk Bum Chung

We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…

The influence of rotomagnetic (RM), rotoelectric (RE) and magnetoelectric (ME) coupling on phase diagram and properties of antiferrodistortive (AFD) perovskite oxides was reviewed. The main examples we consider in the review are typical AFD…

Materials Science · Physics 2018-07-06 Maya D. Glinchuk , Anna N. Morozovska

By using the first-principles electronic structure calculations, we have systematically studied the magnetism in three recently synthesized iron-based antiperovskite chalco-halides: Ba$_3$(FeS$_4$)Cl, Ba$_3$(FeS$_4$)Br, and…

Materials Science · Physics 2021-08-12 Kai Liu , Zhong-Yi Lu

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure,…

The physics of the "Pi" phase shift in ferromagnetic Josephson junctions enables a range of applications for spin-electronic devices and quantum computing. In this respect our research is devoted to the evaluation of the best materials for…

Materials Science · Physics 2008-07-08 Samanta Piano

Motivated by experiments on atomically smooth layers of LaTiO$_3$, a Mott insulator, sandwiched between layers of SrTiO$_3$, a band insulator, a simple model for such heterostructures is studied using quasi one-dimensional lattices and the…

Strongly Correlated Electrons · Physics 2009-11-11 S. S. Kancharla , E. Dagotto

The development of novel functional materials in experimental labs combined with computer-based compound simulation brings the vision of materials design on a microscopic scale continuously closer to reality. For many applications interface…

Materials Science · Physics 2016-06-09 Zhicheng Zhong , Philipp Hansmann

In this study, we determined the different physical characteristics of nanoscale layered mixed Fe-Co layers of orthoferrite SmFe0.5Co0.5O3 based on magnetic and dielectric measurements.Magnetization analyzes showed that the system was…

Materials Science · Physics 2018-12-27 Ashish Shukla , Akash Singh , Md. Motin Seikh , Asish K Kundu

Single crystals of the systems Pr0.5(Ca1-xSrx)0.5MnO3, (Pr1-yYy)0.5(Ca1-xSrx)0.5MnO3, and Sm0.5Sr0.5MnO3 were grown to provide a series of samples with fixed ratio Mn(III)/Mn(IV)=1 having geometric tolerance factors that span the transition…

Materials Science · Physics 2009-11-07 F. Rivadulla , E. Winkler , J. -S. Zhou , J. B. Goodenough

Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…

Mesoscale and Nanoscale Physics · Physics 2011-04-25 A. Geresdi , A. Halbritter , A. Gyenis , P. Makk , G. Mihály