Related papers: Tunable few electron quantum dots in InAs nanowire…
We investigated the entanglement in a diluted magnetic semiconductor quantum dot, crucial for quantum technologies. Despite their potential, these systems exhibit low extraction rates. We explore self-assembled InGaAs quantum dots, focusing…
We consider a quantum dot embedded in a three-dimensional nanowire with tunable aspect ratio a. A configuration interaction theory is developed to calculate the energy spectra of the finite 1D quantum dot systems charged with two electrons…
Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated…
We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating…
We present novel models of quantum gates based on coupled quantum dots in which a qubit is regarded as the superposition of ground states in each dot. Coherent control on the qubit is performed by both a frequency and a polarization of a…
We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…
We report the realization of nanotube-based quantum dot structures that use local electrostatic gating to produce individually controllable dots in series along a nanotube. Electrostatic top-gates produce depletion regions in the underlying…
In traditional approaches of obtaining quantized acoustoelectric current, a narrow channel is fabricated to form quantum dots, which hold a fixed number of electrons at a certain depth. We propose a natural way of forming quantum dots…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
Quantum nanophotonics has become a new research frontier where quantum optics is combined with nanophotonics in order to enhance and control the interaction between strongly confined light and quantum emitters. Such progress provides a…
We realize a device, based on InAs two-dimensional electron gas proximitized by superconducting Al, which allows a single quantum dot level to be used as a spectrometer of the density of states in a nanowire. Applying a magnetic field…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…
GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface.…
We report on the first observation of optical gain from InAs nanocrystal quantum dots emitting at 1.55 microns based on a three-beam, time resolved pump-probe technique. The nanocrystals were embedded into a transparent polymer matrix…
We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave…
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…
Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically…
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the…
Universal set of quantum gates are realized from the conduction-band electron spin qubits of quantum dots embedded in a microcavity via two-channel Raman interaction. All of the gate operations are independent of the cavity mode states,…
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we…