Related papers: Conductance Quantization in Schottky-gated Si/SiGe…
We study a voltage-driven quantum point contact (QPC) strongly coupled to a qubit. We predict pronounced observable features in the QPC current that can be interpreted in terms of half-integer charge transfers. Our analysis is based on the…
One-dimensional quantized conductance is derived from the electrons in a homogeneous electric field by calculating the traveling time of the accelerated motion and the number of electrons in the one-dimensional region. As a result, the…
It is known that the conductance of a quantum point contact is quantized in units of $2e^2/h$ and this quantization is destroyed by a non-adiabatic scatterer in the point contact, due to backscattering. Recently, it was shown [Phys. Rev.…
Self-consistent modelling based on local spin-density formalism is employed to calculate conductance of quantum point contacts at finite temperatures. The total electrostatic potential exhibits spin-dependent splitting, which persists at…
One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an…
A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side…
We consider transport through a one-dimensional conductor subject to an external periodic potential and connected to non-interacting leads (a "Mott quantum wire"). For the case of a strong periodic potential, the conductance is shown to…
We analyze the conductance of the quantum point contact containing large localized spin J. The additional plateau is formed on a ballistic conductance staircase if only one propagating channel is rendered conducting. The conductance value…
We have studied quantum wires using the Green's function technique and the density-functional theory, calculating the electronic structure and the conductance. All the numerics are implemented using the finite-element method with a…
Short length quantum wires (quantum contacts) exhibit a conductance structure at the value of conductance close to 0.7 \times 2e^2/h. The structure is also called the conductance anomaly. In longer contacts the structure evolves to the…
Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is…
We report an experimental study on the shot noise as well as the dc transport properties of a quantum point contact (QPC) whose conductance anomaly can be tuned electrostatically by the gate electrodes. By controlling the single QPC so that…
On the basis of the Chalker-Coddington network model, a numerical and analytical study is made of the statistics of point-contact conductances for systems in the integer quantum Hall regime. In the Hall plateau region the point-contact…
We study the negative correction to the quantized value $2e^2/h$ of the conductance of a quantum point contact due to the backscattering of electrons by acoustic phonons. The correction shows activated temperature dependence and also gives…
We calculate the conductance of a ballistic point contact to a superconducting wire, produced by the s-wave proximity effect in a semiconductor with spin-orbit coupling in a parallel magnetic field. The conductance G as a function of…
Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching of high--electron mobility films grown by MBE on BaF_2. In…
We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…
A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to…
Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but…