Related papers: Hf defects in HfO2/Si
The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111} and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for…
Despite topological protection and the absence of magnetic impurities, two-dimensional topological insulators display quantized conductance only in surprisingly short channels, which can be as short as 100 nm for atomically thin materials.…
We investigate the nitrogen substitutional impurity in semiconducting zigzag and metallic armchair single-wall carbon nanotubes using ab initio density functional theory. At low concentrations (less than 1 atomic %), the defect state in a…
The brownmillerite-type barium indate (Ba$_2$In$_2$O$_5$) is a potential electrolyte for mixed ionic-electronic conduction in solid oxide fuel cells. Revealing the defect chemistry of this material is key to understanding its ionic and…
Tunnelling impurities in metals have been known for some time to have the potential for exhibiting Kondo-like physics. However previous models based on an impurity hopping between two equivalent positions have run into trouble due to the…
Low-energy instabilities in the hole doped cuprates include, besides short range antiferromagnetic fluctuations and superconductivity, also ubiquitous translational and rotational symmetry breakings. The overwhelming majority of…
Hafnium dioxide (HfO2) is a CMOS-compatible ferroelectric showing both 180{\deg} and 90{\deg} switching, yet the microscopic nature of the 90{\deg} pathway remains unresolved. We show that the 90{\deg} rotation pathway, negligible in…
Hybrid improper ferroelectricity (HIF) denotes a new class of polar instability by the mixture of two octahedral-distortion modes and can feature the coexistence of abundant head-to-head and tail-to-tail polar domains, of which the domain…
We show that the charge and thermal transport measurements on ultraclean crystals of URu2Si2 reveal a number of unprecedented superconducting properties. The uniqueness is best highlighted by the peculiar field dependence of thermal…
The mechanism determining the band alignment of the amorphous/crystalline Si heterostructures is addressed with direct atomistic simulations of the interface performed using a hierarchical combination of various computational schemes…
We investigate electronic instabilities in 2H-TaS\textsubscript{2} and a self-intercalated variant, 2H$^\dagger$-Ta\textsubscript{1+$\delta$}S\textsubscript{2}. In conventional samples, which we determine to be slightly hole-doped, spectral…
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb…
We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also…
In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the…
Unconventional features in superconductivity are revealed by responses to impurity scattering. We study non-magnetic impurity effects in a three-dimensional topological superconductor, focusing on an effective model (massive Dirac…
Here we report that the source of Si impurities commonly observed on (010) $\beta-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of…
Charge transport in topological insulators is primarily characterised by so-called topologically projected helical edge states, where charge carriers are correlated in spin and momentum. In principle, dissipation-less current can be carried…
Several Fe chalcogenide superconductors without hole pockets at the Fermi level display high temperature superconductivity, in apparent contradiction to naive spin fluctuation pairing arguments. Recently, scanning tunneling microscopy…
Quasi free standing monolayer graphene (QFMLG) grown on SiC by selective Si evaporation from the Si-rich SiC(0001) face and H intercalation displays irregularities in STM and AFM analysis, appearing as localized features, which we…