Related papers: Magnetic memory and current amplification devices …
Amplification underlies the operation of many biological and engineering systems. Simple electrical, optical, and mechanical amplifiers are reciprocal: the backward coupling of the output to the input equals the forward coupling of the…
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…
Current-driven vortex wall dynamics is studied by means of a two-dimensional analytical model and micromagnetic simulation. By constructing a trial function for the vortex wall in the magnetic wire, we analytically solve for domain wall…
When an electrically charged source is capable of both emitting the electromagnetic waves and creating charged particles from the vacuum, its radiation gets so much amplified that only the backreaction of the vacuum makes it finite. The…
Most of the existing researches on the dynamics of a domain wall (DW) have focused on the effect of DC biases, where the induced velocity is determined by the bias strength. Here we show that AC biases such as a field or a current are also…
The torque generated by the transfer of spin angular momentum from a spin-polarized current to a nanoscale ferromagnet can switch the orientation of the nanomagnet much more efficiently than a current-generated magnetic field, and is…
Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly…
Memory effects are ubiquitous in nature and the class of memory circuit elements - which includes memristors, memcapacitors and meminductors - shows great potential to understand and simulate the associated fundamental physical processes.…
Superconductors used in magnet technology could carry extreme currents because of their ability to keep the magnetic flux motionless. The dynamics of the magnetic flux interaction with superconductors is controlled by this property. The…
We describe a new type of magnetic field sensor which is termed an Electro-Mechanical Resonant Sensor (EMRS). The key part of this sensor is a small conductive elastic element with low damping rate and therefore a high Q fundamental mode of…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Various procedures for expressing the multipolar expansion of the electromagnetic field are considered with application to the calculation of the radiated power. Some results from literature are discussed and perspective of developing the…
Profile of induced eletromotive force (EMF) for a circular loop (CL) entering and leaving a limited rectangular area which has perpendicular uniform magnetic field is reported in this work. The influence of parameters of the sytem to the…
Traditional memory writing operations proceed one bit at a time, where e.g. an individual magnetic domain is force-flipped by a localized external field. One way to increase material storage capacity would be to write several bits at a time…
The dynamic behaviors of magnetic domain walls have significant implications for developing advanced spintronic devices. In this study, we investigate the intriguing resonance phenomenon within the magnetic domain wall structure and its…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
We report the realization of a planar transverse domain wall (TDW) with arbitrary tilting angle in a magnetic biaxial nanowire under a transverse magnetic field (TMF) pulse with fixed strength and optimized orientation profile. We smooth…
We test the effect of an external RF field on the switching processes of magnetic Josephson junctions (MJJs) suitable for the realization of fast, scalable cryogenic memories compatible with Single Flux Quantum logic. We show that the…