Related papers: Magnetic memory and current amplification devices …
Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
Historically the role of eddy currents in the motion of Bloch walls has been extensively studied. In contrast the direct interaction of currents with such a moving wall has received very little attention. However recently it has been shown…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
We theoretically study the motion of a magnetic domain wall induced by transverse elastic waves in a one-dimensional magnetic wire, which respects both rotational and translational symmetries. By invoking the conservation of the associated…
We formulate a theory on the dynamics of conduction electrons in the presence of moving magnetic textures in ferromagnetic materials. We show that the variation of local magnetization in both space and time gives rise to topological fields,…
We suggest electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory). Using a memristor emulator, the suggested circuits have been built and…
The dynamic observation of domain wall motion induced by electric field in magnetoelectric iron garnet film is reported. Measurements in 800 kV/cm electric field pulses gave the domain wall velocity ~45 m/s. Similar velocity was achieved in…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
Electromagnetic memory is an infrared observable of gauge theory associated with soft photons and large gauge transformations. Despite its fundamental theoretical importance, it has not yet been experimentally verified. From a…
Spintronic devices, whose operation is based on the motion of a magnetic domain wall (DW), have been proposed recently. If a DW could be driven directly by flowing an electric current instead of a magnetic field, the performance and…
We report on the direct observation of spin wave and elastic wave emission from magnetic domain walls in ferromagnetic thin films. Driven by alternating homogeneous magnetic fields the magnetic domain walls act as coherent magnetisation…
An antiferromagnetic domain wall in a thermal gradient is found to experience a force towards colder regions upon the application of a uniform magnetic field along the easy axis. This force increases with the strength of the applied field…
We suggest circuit realizations of emulators transforming memristive devices into effective floating memcapacitive and meminductive systems. The emulator's circuits are based on second generation current conveyors and involve either four…
An elementary derivation of the electromagnetic memory effect is given. An experimental setup to detect it is suggested.
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
We consider the amplification in strong electric (magnetic) fields that are uniform along the direction of the electron motion and are not uniform in the transverse direction. It is shown that in such a system the gain is increased compared…
We study the dynamics of a magnetic domain wall, inserted in, or juxtaposed to, a conventional superconductor, via the passage of a spin polarized current through a FSF junction. Solving the Landau-Lifshitz-Gilbert equation of motion for…
Parametric amplification is an interesting way of artificially increasing a MEMS Quality factor and could be helpful in many kinds of applications. This paper presents a theoretical study of this principle, based on Matlab/Simulink…