Related papers: Hot Electron Effects in the 2D Superconductor-Insu…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
High quality strongly correlated two-dimensional (2D) electron systems at low temperatures $T\rightarrow 0$ exhibits an apparent metal-to-insulator transition (MIT) at a large $r_s$ value around 40. We have measured the magnetoresistance of…
We analyse the effects of applying an electric field on the critical temperature, Ts, at which superionicity appears in archetypal fast ion conductor CaF2 by means of molecular dynamics simulations. We find that the onset of superionicity…
Epitaxial thin films of the heavy fermion superconductor UNi2Al3 with Tc{max}=0.98K were investigated. The transition temperature Tc depends on the current direction which can be related to superconducting gaps opening at different…
A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It…
Ultrathin amorphous Bi films, patterned with a nano-honeycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs of electrons between localized states. Here we show that the…
Influence of disorder-induced Anderson localization and of electron-electron interaction on superconductivity in two-dimensional systems is explored. We determine the superconducting transition temperature $T_c$, the temperature dependence…
We show results from simulations of the Langevin dynamics of a two-dimensional scalar model with competing interactions for ultrathin magnetic films. We find a phase transition from a high temperature disordered phase to a low temperature…
The maximum value of the superconducting transition temperature Tc due to a phonon-mediated interaction was estimated by Cohen and Anderson in 1972 from ab initio considerations, and found to be about 10 K. McMillan's semi empirical…
Transport data on Bi, MoGe, and PbBi/Ge homogeneously-disordered thin films demonstrate that the critical resistivity, $R_c$, at the nominal insulator-superconductor transition is linearly proportional to the normal sheet resistance, $R_N$.…
CaBi2 has been experimentally found to be a superconductor with a transition temperature of 2 K and identified as a topological insulator via spin- and angle-resolved photoemission spectroscopy, which makes it a possible platform to study…
The speed of integrated circuits is ultimately limited by the mobility of electrons or holes, which depend on the effective mass in a semiconductor. Here, building on an analogy with electromagnetic metamaterials and transformation optics,…
The complex magnetic transitions and superconductivity of HoNi2B2C were studied via the dependence of the heat capacity on temperature and in-plane field angle. We provide an extended, comprehensive magnetic phase diagram for B // [100] and…
We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…
Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically…
We investigated the thermodynamic property of the heavy fermion superconductor UTe$_2$ in pulsed high magnetic fields. The superconducting transition in zero field was observed at $T_{\rm c}$=1.65 K as a sharp heat capacity jump.…
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the…
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…
The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…