Related papers: Low-dimensional light-emitting transistor with tun…
Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the…
Excitonic insulators conduct neither electrons nor holes but bound electron-hole pairs, excitons. Unfortunately, it is not possible to inject and detect the electron and hole currents independently within a single semiconducting layer.…
In this Communication, it is shown that models used for describing generation and recombination of electrons and holes lead to disagreements with Maxwell's electrodynamics. Self-consistent expressions, more adequately depicting the actual…
Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to…
Electron doping is an excellent tuning knob to explore different phases of matter in two-dimensional (2D) materials. For example, tuning the Fermi level at a van Hove singularity in twisted bilayer graphene can enhance electron-electron…
The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional,…
Moire superlattices in twisted transition metal dichalcogenide bilayers have emerged as a rich platform for exploring strong correlations using optical spectroscopy. Despite observation of rich Mott-Wigner physics stemming from an interplay…
The ultrafast conversion of electrical to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor LEDs are limited by…
Two-level system fluctuators (TLS's) in the tunnel barrier of a Josephson junction have recently been demonstrated to cause novel energy splittings in spectroscopic measurements of superconducting phase qubits. With their strong coupling to…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…
We provide an analysis of the electromagnetic modes of three-dimensional metamaterial resonators in the THz frequency range. The fundamental resonance of the structures is fully described by an analytical circuit model, which not only…
The approach applicable for spatially inhomogeneous and time-dependent problems associated with the induced superconductivity in low dimensional electronic systems is developed. This approach is based on the Fano--Anderson model which…
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other…
We report strong light emission from a room-temperature n-type unipolar-doped In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb…
The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate…
Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density.…
In contrast to interband excitons in undoped quantum wells, doped quantum wells do not display sharp resonances due to excitonic bound states. In these systems the effective Coulomb interaction between electrons and holes typically only…