Related papers: Charge trapping in polymer transistors probed by t…
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
Extensive irradiation of silicon crystal sensors by high energy particles in e. g. accelerators yield defect clusters of different types. Trapping of electrons and holes result in extended internal electric fields that drive remaining free…
We present an investigation into the effects of high-energy proton damage on charge trapping in germanium cross-strip detectors, with the goal of accomplishing three important measurements. First, we calibrated and characterized the…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has…
We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping…
With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a…
Experimental results are presented on anomalous behavior of absorption currents in PVDF during the stepwise increase of the voltage applied through a corona. These results, supplemented with the dynamics of the time constant of the electret…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…
Typically, amorphous organic materials contain high density of traps. Traps hinder charge transport and, hence, affect various working parameters of organic electronic devices. In this paper we suggest a simple but reliable method for the…
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…
Coating thickness measurement and inspection of defects beneath optically opaque surfaces are among the most promising commercial applications of the terahertz (THz) imaging technology. However, there are two main sources of complexity in…
By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two…
We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by two-carrier Drude…
The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the…